Properties of homoepitaxially MBE-grown GaN

T. Suski; J. Krueger; C. Kisielowski; P. Phatak; M. S H Leung; Z. Liliental-Weber; A. Gassmann; Nathan Newman; M. D. Rubin; E. R. Weber; I. Grzegory; J. Jun; M. Bockowski; S. Porowski; H. I. Helava

Properties of homoepitaxially MBE-grown GaN

T. Suski, J. Krueger, C. Kisielowski, P. Phatak, M. S H Leung, Z. Liliental-Weber, A. Gassmann, Nathan Newman, M. D. Rubin, E. R. Weber, I. Grzegory, J. Jun, M. Bockowski, S. Porowski, H. I. Helava

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Bulk single crystals of GaN were used for epitaxial growth of GaN films by molecular beam epitaxy. Low temperature photoluminescence yields much higher intensity emission in the near band-edge region for epitaxial films with respect to the situation in bulk crystals. Character of this luminescence changes also. Dominant band-to-band transitions in the bulk crystals are exchanged by bound exciton and/or donor-acceptor pair transitions observed in the epitaxial layers. We will compare the obtained results with the available data on the homoepitaxial samples grown by metallorganic chemical vapor deposition method and discuss the importance of establishing the basic information on energetic positions of excitonic transitions in stress free samples.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Publisher	Materials Research Society
Pages	329-334
Number of pages	6
Volume	423
State	Published - 1996
Externally published	Yes
Event	Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA Duration: Apr 8 1996 → Apr 12 1996

Other

Other	Proceedings of the 1996 MRS Spring Symposium
City	San Francisco, CA, USA
Period	4/8/96 → 4/12/96

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

Suski, T., Krueger, J., Kisielowski, C., Phatak, P., Leung, M. S. H., Liliental-Weber, Z., Gassmann, A., Newman, N., Rubin, M. D., Weber, E. R., Grzegory, I., Jun, J., Bockowski, M., Porowski, S., & Helava, H. I. (1996). Properties of homoepitaxially MBE-grown GaN. In Materials Research Society Symposium - Proceedings (Vol. 423, pp. 329-334). Materials Research Society.

Suski, T, Krueger, J, Kisielowski, C, Phatak, P, Leung, MSH, Liliental-Weber, Z, Gassmann, A, Newman, N, Rubin, MD, Weber, ER, Grzegory, I, Jun, J, Bockowski, M, Porowski, S & Helava, HI 1996, Properties of homoepitaxially MBE-grown GaN. in Materials Research Society Symposium - Proceedings. vol. 423, Materials Research Society, pp. 329-334, Proceedings of the 1996 MRS Spring Symposium, San Francisco, CA, USA, 4/8/96.

@inproceedings{09258b3ff1cc4344b71795e7b5a27e35,

title = "Properties of homoepitaxially MBE-grown GaN",

abstract = "Bulk single crystals of GaN were used for epitaxial growth of GaN films by molecular beam epitaxy. Low temperature photoluminescence yields much higher intensity emission in the near band-edge region for epitaxial films with respect to the situation in bulk crystals. Character of this luminescence changes also. Dominant band-to-band transitions in the bulk crystals are exchanged by bound exciton and/or donor-acceptor pair transitions observed in the epitaxial layers. We will compare the obtained results with the available data on the homoepitaxial samples grown by metallorganic chemical vapor deposition method and discuss the importance of establishing the basic information on energetic positions of excitonic transitions in stress free samples.",

author = "T. Suski and J. Krueger and C. Kisielowski and P. Phatak and Leung, {M. S H} and Z. Liliental-Weber and A. Gassmann and Nathan Newman and Rubin, {M. D.} and Weber, {E. R.} and I. Grzegory and J. Jun and M. Bockowski and S. Porowski and Helava, {H. I.}",

year = "1996",

language = "English (US)",

volume = "423",

pages = "329--334",

booktitle = "Materials Research Society Symposium - Proceedings",

publisher = "Materials Research Society",

note = "Proceedings of the 1996 MRS Spring Symposium ; Conference date: 08-04-1996 Through 12-04-1996",

}

TY - GEN

T1 - Properties of homoepitaxially MBE-grown GaN

AU - Suski, T.

AU - Krueger, J.

AU - Kisielowski, C.

AU - Phatak, P.

AU - Leung, M. S H

AU - Liliental-Weber, Z.

AU - Gassmann, A.

AU - Newman, Nathan

AU - Rubin, M. D.

AU - Weber, E. R.

AU - Grzegory, I.

AU - Jun, J.

AU - Bockowski, M.

AU - Porowski, S.

AU - Helava, H. I.

PY - 1996

Y1 - 1996

N2 - Bulk single crystals of GaN were used for epitaxial growth of GaN films by molecular beam epitaxy. Low temperature photoluminescence yields much higher intensity emission in the near band-edge region for epitaxial films with respect to the situation in bulk crystals. Character of this luminescence changes also. Dominant band-to-band transitions in the bulk crystals are exchanged by bound exciton and/or donor-acceptor pair transitions observed in the epitaxial layers. We will compare the obtained results with the available data on the homoepitaxial samples grown by metallorganic chemical vapor deposition method and discuss the importance of establishing the basic information on energetic positions of excitonic transitions in stress free samples.

AB - Bulk single crystals of GaN were used for epitaxial growth of GaN films by molecular beam epitaxy. Low temperature photoluminescence yields much higher intensity emission in the near band-edge region for epitaxial films with respect to the situation in bulk crystals. Character of this luminescence changes also. Dominant band-to-band transitions in the bulk crystals are exchanged by bound exciton and/or donor-acceptor pair transitions observed in the epitaxial layers. We will compare the obtained results with the available data on the homoepitaxial samples grown by metallorganic chemical vapor deposition method and discuss the importance of establishing the basic information on energetic positions of excitonic transitions in stress free samples.

UR - http://www.scopus.com/inward/record.url?scp=0030400750&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030400750&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0030400750

VL - 423

SP - 329

EP - 334

BT - Materials Research Society Symposium - Proceedings

PB - Materials Research Society

T2 - Proceedings of the 1996 MRS Spring Symposium

Y2 - 8 April 1996 through 12 April 1996

ER -

Properties of homoepitaxially MBE-grown GaN

Abstract

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ASJC Scopus subject areas

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