Properties of homoepitaxially MBE-grown GaN

T. Suski, J. Krueger, C. Kisielowski, P. Phatak, M. S H Leung, Z. Liliental-Weber, A. Gassmann, Nathan Newman, M. D. Rubin, E. R. Weber, I. Grzegory, J. Jun, M. Bockowski, S. Porowski, H. I. Helava

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Bulk single crystals of GaN were used for epitaxial growth of GaN films by molecular beam epitaxy. Low temperature photoluminescence yields much higher intensity emission in the near band-edge region for epitaxial films with respect to the situation in bulk crystals. Character of this luminescence changes also. Dominant band-to-band transitions in the bulk crystals are exchanged by bound exciton and/or donor-acceptor pair transitions observed in the epitaxial layers. We will compare the obtained results with the available data on the homoepitaxial samples grown by metallorganic chemical vapor deposition method and discuss the importance of establishing the basic information on energetic positions of excitonic transitions in stress free samples.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages329-334
Number of pages6
Volume423
StatePublished - 1996
Externally publishedYes
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: Apr 8 1996Apr 12 1996

Other

OtherProceedings of the 1996 MRS Spring Symposium
CitySan Francisco, CA, USA
Period4/8/964/12/96

Fingerprint

Electron transitions
Molecular beam epitaxy
Crystals
Epitaxial films
Epitaxial layers
Metallorganic chemical vapor deposition
Epitaxial growth
Excitons
Luminescence
Photoluminescence
Single crystals
Temperature
LDS 751

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Suski, T., Krueger, J., Kisielowski, C., Phatak, P., Leung, M. S. H., Liliental-Weber, Z., ... Helava, H. I. (1996). Properties of homoepitaxially MBE-grown GaN. In Materials Research Society Symposium - Proceedings (Vol. 423, pp. 329-334). Materials Research Society.

Properties of homoepitaxially MBE-grown GaN. / Suski, T.; Krueger, J.; Kisielowski, C.; Phatak, P.; Leung, M. S H; Liliental-Weber, Z.; Gassmann, A.; Newman, Nathan; Rubin, M. D.; Weber, E. R.; Grzegory, I.; Jun, J.; Bockowski, M.; Porowski, S.; Helava, H. I.

Materials Research Society Symposium - Proceedings. Vol. 423 Materials Research Society, 1996. p. 329-334.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Suski, T, Krueger, J, Kisielowski, C, Phatak, P, Leung, MSH, Liliental-Weber, Z, Gassmann, A, Newman, N, Rubin, MD, Weber, ER, Grzegory, I, Jun, J, Bockowski, M, Porowski, S & Helava, HI 1996, Properties of homoepitaxially MBE-grown GaN. in Materials Research Society Symposium - Proceedings. vol. 423, Materials Research Society, pp. 329-334, Proceedings of the 1996 MRS Spring Symposium, San Francisco, CA, USA, 4/8/96.
Suski T, Krueger J, Kisielowski C, Phatak P, Leung MSH, Liliental-Weber Z et al. Properties of homoepitaxially MBE-grown GaN. In Materials Research Society Symposium - Proceedings. Vol. 423. Materials Research Society. 1996. p. 329-334
Suski, T. ; Krueger, J. ; Kisielowski, C. ; Phatak, P. ; Leung, M. S H ; Liliental-Weber, Z. ; Gassmann, A. ; Newman, Nathan ; Rubin, M. D. ; Weber, E. R. ; Grzegory, I. ; Jun, J. ; Bockowski, M. ; Porowski, S. ; Helava, H. I. / Properties of homoepitaxially MBE-grown GaN. Materials Research Society Symposium - Proceedings. Vol. 423 Materials Research Society, 1996. pp. 329-334
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abstract = "Bulk single crystals of GaN were used for epitaxial growth of GaN films by molecular beam epitaxy. Low temperature photoluminescence yields much higher intensity emission in the near band-edge region for epitaxial films with respect to the situation in bulk crystals. Character of this luminescence changes also. Dominant band-to-band transitions in the bulk crystals are exchanged by bound exciton and/or donor-acceptor pair transitions observed in the epitaxial layers. We will compare the obtained results with the available data on the homoepitaxial samples grown by metallorganic chemical vapor deposition method and discuss the importance of establishing the basic information on energetic positions of excitonic transitions in stress free samples.",
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AU - Suski, T.

AU - Krueger, J.

AU - Kisielowski, C.

AU - Phatak, P.

AU - Leung, M. S H

AU - Liliental-Weber, Z.

AU - Gassmann, A.

AU - Newman, Nathan

AU - Rubin, M. D.

AU - Weber, E. R.

AU - Grzegory, I.

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AU - Helava, H. I.

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AB - Bulk single crystals of GaN were used for epitaxial growth of GaN films by molecular beam epitaxy. Low temperature photoluminescence yields much higher intensity emission in the near band-edge region for epitaxial films with respect to the situation in bulk crystals. Character of this luminescence changes also. Dominant band-to-band transitions in the bulk crystals are exchanged by bound exciton and/or donor-acceptor pair transitions observed in the epitaxial layers. We will compare the obtained results with the available data on the homoepitaxial samples grown by metallorganic chemical vapor deposition method and discuss the importance of establishing the basic information on energetic positions of excitonic transitions in stress free samples.

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