TY - GEN
T1 - Properties and Imaging of Thick Doped Amorphous Silicon in Direct Contact with Aluminum for Use in Silicon Heterojunction Solar Cells
AU - Bryan, Jonathan L.
AU - Gangopadhyay, Abhinandan
AU - Yu, Zhengshan
AU - Leilaeioun, Ashling Mehdi
AU - Carpenter, Joe V.
AU - Shi, Jianwei
AU - Weigand, William
AU - Fisher, Kathryn C.
AU - Smith, David J.
AU - Holman, Zachary
N1 - Funding Information:
This material is based upon work primarily supported by the Engineering Research Center Program of the National Science Foundation and the Office of Energy Efficiency and Renewable Energy of the Department of Energy under NSF Cooperative Agreement No. EEC‐1041895. We acknowledge the use of facilities within the Eyring Materials Center at Arizona State University.
Publisher Copyright:
© 2018 IEEE.
PY - 2018/11/26
Y1 - 2018/11/26
N2 - We present the characterization of amorphous silicon/aluminum carrier-selective contacts in both front- and rear-emitter configurations, where the aluminum makes direct contact with the doped a-Si:H layers in silicon heterojunction solar cells. The resistance and passivation quality of these contacts have been measured using the transmission line measurement and the quasi-steady-state photoconductance techniques, respectively. The thickness of the doped a-Si:H layer in direct contact with the aluminum is 20 nm and post-aluminumsputtering annealing temperature ranges from 150-240 °C. Samples with aluminum on an a-Si:H(n) layer annealed at 180°C had a contact resistivity below 1 mΩcm 2 while the lifetime remained at 4.8 milliseconds- essentially unchanged from the pre-sputtered, passivated sample. These values are superior to those for the traditional silicon heterojunction contact with a transparent conductive oxide layer and can enable devices with low resistive losses and tremendous optical properties through the insertion of a low-refractive index dielectric material at a wellchosen contact fraction.
AB - We present the characterization of amorphous silicon/aluminum carrier-selective contacts in both front- and rear-emitter configurations, where the aluminum makes direct contact with the doped a-Si:H layers in silicon heterojunction solar cells. The resistance and passivation quality of these contacts have been measured using the transmission line measurement and the quasi-steady-state photoconductance techniques, respectively. The thickness of the doped a-Si:H layer in direct contact with the aluminum is 20 nm and post-aluminumsputtering annealing temperature ranges from 150-240 °C. Samples with aluminum on an a-Si:H(n) layer annealed at 180°C had a contact resistivity below 1 mΩcm 2 while the lifetime remained at 4.8 milliseconds- essentially unchanged from the pre-sputtered, passivated sample. These values are superior to those for the traditional silicon heterojunction contact with a transparent conductive oxide layer and can enable devices with low resistive losses and tremendous optical properties through the insertion of a low-refractive index dielectric material at a wellchosen contact fraction.
KW - amorphous silicon
KW - crystalline silicon
KW - silicon heterojunction solar cells
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U2 - 10.1109/PVSC.2018.8547780
DO - 10.1109/PVSC.2018.8547780
M3 - Conference contribution
AN - SCOPUS:85059887822
T3 - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
SP - 1974
EP - 1978
BT - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Y2 - 10 June 2018 through 15 June 2018
ER -