Properties and Imaging of Thick Doped Amorphous Silicon in Direct Contact with Aluminum for Use in Silicon Heterojunction Solar Cells

Jonathan L. Bryan, Abhinandan Gangopadhyay, Zhengshan Yu, Ashling Mehdi Leilaeioun, Joe V. Carpenter, Jianwei Shi, William Weigand, Kathryn C. Fisher, David J. Smith, Zachary Holman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present the characterization of amorphous silicon/aluminum carrier-selective contacts in both front- and rear-emitter configurations, where the aluminum makes direct contact with the doped a-Si:H layers in silicon heterojunction solar cells. The resistance and passivation quality of these contacts have been measured using the transmission line measurement and the quasi-steady-state photoconductance techniques, respectively. The thickness of the doped a-Si:H layer in direct contact with the aluminum is 20 nm and post-aluminumsputtering annealing temperature ranges from 150-240 °C. Samples with aluminum on an a-Si:H(n) layer annealed at 180°C had a contact resistivity below 1 mΩcm2 while the lifetime remained at 4.8 milliseconds- essentially unchanged from the pre-sputtered, passivated sample. These values are superior to those for the traditional silicon heterojunction contact with a transparent conductive oxide layer and can enable devices with low resistive losses and tremendous optical properties through the insertion of a low-refractive index dielectric material at a wellchosen contact fraction.

Original languageEnglish (US)
Title of host publication2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1974-1978
Number of pages5
ISBN (Electronic)9781538685297
DOIs
StatePublished - Nov 26 2018
Event7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States
Duration: Jun 10 2018Jun 15 2018

Other

Other7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
CountryUnited States
CityWaikoloa Village
Period6/10/186/15/18

Fingerprint

Silicon
Aluminum
Amorphous silicon
Heterojunctions
Solar cells
Imaging techniques
Passivation
Oxides
Electric lines
Refractive index
Optical properties
Annealing
Temperature

Keywords

  • amorphous silicon
  • crystalline silicon
  • silicon heterojunction solar cells

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Bryan, J. L., Gangopadhyay, A., Yu, Z., Leilaeioun, A. M., Carpenter, J. V., Shi, J., ... Holman, Z. (2018). Properties and Imaging of Thick Doped Amorphous Silicon in Direct Contact with Aluminum for Use in Silicon Heterojunction Solar Cells. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC (pp. 1974-1978). [8547780] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2018.8547780

Properties and Imaging of Thick Doped Amorphous Silicon in Direct Contact with Aluminum for Use in Silicon Heterojunction Solar Cells. / Bryan, Jonathan L.; Gangopadhyay, Abhinandan; Yu, Zhengshan; Leilaeioun, Ashling Mehdi; Carpenter, Joe V.; Shi, Jianwei; Weigand, William; Fisher, Kathryn C.; Smith, David J.; Holman, Zachary.

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1974-1978 8547780.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Bryan, JL, Gangopadhyay, A, Yu, Z, Leilaeioun, AM, Carpenter, JV, Shi, J, Weigand, W, Fisher, KC, Smith, DJ & Holman, Z 2018, Properties and Imaging of Thick Doped Amorphous Silicon in Direct Contact with Aluminum for Use in Silicon Heterojunction Solar Cells. in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC., 8547780, Institute of Electrical and Electronics Engineers Inc., pp. 1974-1978, 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, Waikoloa Village, United States, 6/10/18. https://doi.org/10.1109/PVSC.2018.8547780
Bryan JL, Gangopadhyay A, Yu Z, Leilaeioun AM, Carpenter JV, Shi J et al. Properties and Imaging of Thick Doped Amorphous Silicon in Direct Contact with Aluminum for Use in Silicon Heterojunction Solar Cells. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1974-1978. 8547780 https://doi.org/10.1109/PVSC.2018.8547780
Bryan, Jonathan L. ; Gangopadhyay, Abhinandan ; Yu, Zhengshan ; Leilaeioun, Ashling Mehdi ; Carpenter, Joe V. ; Shi, Jianwei ; Weigand, William ; Fisher, Kathryn C. ; Smith, David J. ; Holman, Zachary. / Properties and Imaging of Thick Doped Amorphous Silicon in Direct Contact with Aluminum for Use in Silicon Heterojunction Solar Cells. 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 1974-1978
@inproceedings{3b68b658ffc84e1a911e97ad17da98b3,
title = "Properties and Imaging of Thick Doped Amorphous Silicon in Direct Contact with Aluminum for Use in Silicon Heterojunction Solar Cells",
abstract = "We present the characterization of amorphous silicon/aluminum carrier-selective contacts in both front- and rear-emitter configurations, where the aluminum makes direct contact with the doped a-Si:H layers in silicon heterojunction solar cells. The resistance and passivation quality of these contacts have been measured using the transmission line measurement and the quasi-steady-state photoconductance techniques, respectively. The thickness of the doped a-Si:H layer in direct contact with the aluminum is 20 nm and post-aluminumsputtering annealing temperature ranges from 150-240 °C. Samples with aluminum on an a-Si:H(n) layer annealed at 180°C had a contact resistivity below 1 mΩcm2 while the lifetime remained at 4.8 milliseconds- essentially unchanged from the pre-sputtered, passivated sample. These values are superior to those for the traditional silicon heterojunction contact with a transparent conductive oxide layer and can enable devices with low resistive losses and tremendous optical properties through the insertion of a low-refractive index dielectric material at a wellchosen contact fraction.",
keywords = "amorphous silicon, crystalline silicon, silicon heterojunction solar cells",
author = "Bryan, {Jonathan L.} and Abhinandan Gangopadhyay and Zhengshan Yu and Leilaeioun, {Ashling Mehdi} and Carpenter, {Joe V.} and Jianwei Shi and William Weigand and Fisher, {Kathryn C.} and Smith, {David J.} and Zachary Holman",
year = "2018",
month = "11",
day = "26",
doi = "10.1109/PVSC.2018.8547780",
language = "English (US)",
pages = "1974--1978",
booktitle = "2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - Properties and Imaging of Thick Doped Amorphous Silicon in Direct Contact with Aluminum for Use in Silicon Heterojunction Solar Cells

AU - Bryan, Jonathan L.

AU - Gangopadhyay, Abhinandan

AU - Yu, Zhengshan

AU - Leilaeioun, Ashling Mehdi

AU - Carpenter, Joe V.

AU - Shi, Jianwei

AU - Weigand, William

AU - Fisher, Kathryn C.

AU - Smith, David J.

AU - Holman, Zachary

PY - 2018/11/26

Y1 - 2018/11/26

N2 - We present the characterization of amorphous silicon/aluminum carrier-selective contacts in both front- and rear-emitter configurations, where the aluminum makes direct contact with the doped a-Si:H layers in silicon heterojunction solar cells. The resistance and passivation quality of these contacts have been measured using the transmission line measurement and the quasi-steady-state photoconductance techniques, respectively. The thickness of the doped a-Si:H layer in direct contact with the aluminum is 20 nm and post-aluminumsputtering annealing temperature ranges from 150-240 °C. Samples with aluminum on an a-Si:H(n) layer annealed at 180°C had a contact resistivity below 1 mΩcm2 while the lifetime remained at 4.8 milliseconds- essentially unchanged from the pre-sputtered, passivated sample. These values are superior to those for the traditional silicon heterojunction contact with a transparent conductive oxide layer and can enable devices with low resistive losses and tremendous optical properties through the insertion of a low-refractive index dielectric material at a wellchosen contact fraction.

AB - We present the characterization of amorphous silicon/aluminum carrier-selective contacts in both front- and rear-emitter configurations, where the aluminum makes direct contact with the doped a-Si:H layers in silicon heterojunction solar cells. The resistance and passivation quality of these contacts have been measured using the transmission line measurement and the quasi-steady-state photoconductance techniques, respectively. The thickness of the doped a-Si:H layer in direct contact with the aluminum is 20 nm and post-aluminumsputtering annealing temperature ranges from 150-240 °C. Samples with aluminum on an a-Si:H(n) layer annealed at 180°C had a contact resistivity below 1 mΩcm2 while the lifetime remained at 4.8 milliseconds- essentially unchanged from the pre-sputtered, passivated sample. These values are superior to those for the traditional silicon heterojunction contact with a transparent conductive oxide layer and can enable devices with low resistive losses and tremendous optical properties through the insertion of a low-refractive index dielectric material at a wellchosen contact fraction.

KW - amorphous silicon

KW - crystalline silicon

KW - silicon heterojunction solar cells

UR - http://www.scopus.com/inward/record.url?scp=85059887822&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85059887822&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2018.8547780

DO - 10.1109/PVSC.2018.8547780

M3 - Conference contribution

SP - 1974

EP - 1978

BT - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

PB - Institute of Electrical and Electronics Engineers Inc.

ER -