Abstract
We present the characterization of amorphous silicon/aluminum carrier-selective contacts in both front- and rear-emitter configurations, where the aluminum makes direct contact with the doped a-Si:H layers in silicon heterojunction solar cells. The resistance and passivation quality of these contacts have been measured using the transmission line measurement and the quasi-steady-state photoconductance techniques, respectively. The thickness of the doped a-Si:H layer in direct contact with the aluminum is 20 nm and post-aluminumsputtering annealing temperature ranges from 150-240 °C. Samples with aluminum on an a-Si:H(n) layer annealed at 180°C had a contact resistivity below 1 mΩcm2 while the lifetime remained at 4.8 milliseconds- essentially unchanged from the pre-sputtered, passivated sample. These values are superior to those for the traditional silicon heterojunction contact with a transparent conductive oxide layer and can enable devices with low resistive losses and tremendous optical properties through the insertion of a low-refractive index dielectric material at a wellchosen contact fraction.
| Original language | English (US) |
|---|---|
| Title of host publication | 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 1974-1978 |
| Number of pages | 5 |
| ISBN (Electronic) | 9781538685297 |
| DOIs | |
| State | Published - Nov 26 2018 |
| Event | 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States Duration: Jun 10 2018 → Jun 15 2018 |
Other
| Other | 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 |
|---|---|
| Country | United States |
| City | Waikoloa Village |
| Period | 6/10/18 → 6/15/18 |
Fingerprint
Keywords
- amorphous silicon
- crystalline silicon
- silicon heterojunction solar cells
ASJC Scopus subject areas
- Energy Engineering and Power Technology
- Renewable Energy, Sustainability and the Environment
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
Properties and Imaging of Thick Doped Amorphous Silicon in Direct Contact with Aluminum for Use in Silicon Heterojunction Solar Cells. / Bryan, Jonathan L.; Gangopadhyay, Abhinandan; Yu, Zhengshan; Leilaeioun, Ashling Mehdi; Carpenter, Joe V.; Shi, Jianwei; Weigand, William; Fisher, Kathryn C.; Smith, David J.; Holman, Zachary.
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1974-1978 8547780.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Properties and Imaging of Thick Doped Amorphous Silicon in Direct Contact with Aluminum for Use in Silicon Heterojunction Solar Cells
AU - Bryan, Jonathan L.
AU - Gangopadhyay, Abhinandan
AU - Yu, Zhengshan
AU - Leilaeioun, Ashling Mehdi
AU - Carpenter, Joe V.
AU - Shi, Jianwei
AU - Weigand, William
AU - Fisher, Kathryn C.
AU - Smith, David J.
AU - Holman, Zachary
PY - 2018/11/26
Y1 - 2018/11/26
N2 - We present the characterization of amorphous silicon/aluminum carrier-selective contacts in both front- and rear-emitter configurations, where the aluminum makes direct contact with the doped a-Si:H layers in silicon heterojunction solar cells. The resistance and passivation quality of these contacts have been measured using the transmission line measurement and the quasi-steady-state photoconductance techniques, respectively. The thickness of the doped a-Si:H layer in direct contact with the aluminum is 20 nm and post-aluminumsputtering annealing temperature ranges from 150-240 °C. Samples with aluminum on an a-Si:H(n) layer annealed at 180°C had a contact resistivity below 1 mΩcm2 while the lifetime remained at 4.8 milliseconds- essentially unchanged from the pre-sputtered, passivated sample. These values are superior to those for the traditional silicon heterojunction contact with a transparent conductive oxide layer and can enable devices with low resistive losses and tremendous optical properties through the insertion of a low-refractive index dielectric material at a wellchosen contact fraction.
AB - We present the characterization of amorphous silicon/aluminum carrier-selective contacts in both front- and rear-emitter configurations, where the aluminum makes direct contact with the doped a-Si:H layers in silicon heterojunction solar cells. The resistance and passivation quality of these contacts have been measured using the transmission line measurement and the quasi-steady-state photoconductance techniques, respectively. The thickness of the doped a-Si:H layer in direct contact with the aluminum is 20 nm and post-aluminumsputtering annealing temperature ranges from 150-240 °C. Samples with aluminum on an a-Si:H(n) layer annealed at 180°C had a contact resistivity below 1 mΩcm2 while the lifetime remained at 4.8 milliseconds- essentially unchanged from the pre-sputtered, passivated sample. These values are superior to those for the traditional silicon heterojunction contact with a transparent conductive oxide layer and can enable devices with low resistive losses and tremendous optical properties through the insertion of a low-refractive index dielectric material at a wellchosen contact fraction.
KW - amorphous silicon
KW - crystalline silicon
KW - silicon heterojunction solar cells
UR - http://www.scopus.com/inward/record.url?scp=85059887822&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85059887822&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2018.8547780
DO - 10.1109/PVSC.2018.8547780
M3 - Conference contribution
SP - 1974
EP - 1978
BT - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
PB - Institute of Electrical and Electronics Engineers Inc.
ER -