Abstract
In recent years there has been a great upsurge of applications involving quantitative high-resolution electron microscopy, in particular comparing experimental micrographs with image simulations for determination of defect structures. Emphasis has been given to the determination of experimental parameters, the utilization of slow-scan CCD cameras for digital recording and extraction of quantitative structural and chemical information. More attention to surface cleanliness is needed to improve signal quality and the possibility of electron irradiation damage should not be overlooked. Issues related to adoption of a reliability of R-factor are briefly discussed.
Original language | English (US) |
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Pages (from-to) | 591-601 |
Number of pages | 11 |
Journal | Ultramicroscopy |
Volume | 52 |
Issue number | 3-4 |
DOIs | |
State | Published - Dec 1993 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Instrumentation