Programmed rate processing to increase throughput in LPCVD

T. S. Cale, M. K. Jain, Gregory Raupp

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

The simultaneous one-dimensional Knudsen diffusion and chemical reaction description of low-pressure chemical vapor deposition in features on patterned surfaces is used to show that a substantial decrease in processing time can be achieved for a given step coverage by varying the deposition rate in a prescribed manner during the process. For constant-rate CVD (CRCVD) processes, the rate is dictated by the rate required to obtain a good step coverage at the end of the process when the instantaneous aspect ratio becomes very large. The use of a programmed-rate CVD (PRCVD) process allows a larger average deposition rate, since the initial rate is much higher than the rate required to maintain good step coverage close to feature closure. The PRCVD concept is demonstrated for the thermally activated deposition of silicon dioxide from tetraethylorthosilicate (TEOS) by decreasing the temperature during deposition. The two-step process path chosen for our calculations is not optimal; however, it can be easily implemented and modified. The time sayed depends on the reaction kinetics, but approaches 50% of the constant rate process time for step coverages above 95%.

Original languageEnglish (US)
Pages (from-to)1526-1533
Number of pages8
JournalJournal of the Electrochemical Society
Volume137
Issue number5
StatePublished - May 1990

Fingerprint

Deposition rates
Throughput
Low pressure chemical vapor deposition
Processing
Reaction kinetics
Silicon Dioxide
Aspect ratio
Chemical reactions
Chemical vapor deposition
Silica
Temperature
tetraethoxysilane

ASJC Scopus subject areas

  • Electrochemistry

Cite this

Programmed rate processing to increase throughput in LPCVD. / Cale, T. S.; Jain, M. K.; Raupp, Gregory.

In: Journal of the Electrochemical Society, Vol. 137, No. 5, 05.1990, p. 1526-1533.

Research output: Contribution to journalArticle

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