Programmable metallization cell memory based on Ag-Ge-S and Cu-Ge-S solid electrolytes

Michael Kozicki, M. Balakrishnan, C. Gopalan, C. Ratnakumar, M. Mitkova

Research output: Chapter in Book/Report/Conference proceedingConference contribution

92 Citations (Scopus)

Abstract

Programmable Metallization Cell (PMC) memory is based on the electrochemical growth and removal of nanoscale metallic pathways in thin films of solid electrolyte. Our previous studies concentrated on electrolytes formed from silver-doped germanium selenide glasses but these materials are not able to withstand the temperatures used in standard back-end-of-line processing for the fabrication of CMOS integrated circuits. This paper concerns our more recent work on silver-doped germanium sulfide electrolytes and describes the electrical characteristics of PMC devices made from these materials following annealing at 300°C and 430°C. We also present results from devices that use copper in place of silver as this metal is currently used in integrated circuit interconnect.

Original languageEnglish (US)
Title of host publication2005 Non-Volatile Memory Technology Symposium, NVMTS05
Pages83-89
Number of pages7
DOIs
StatePublished - 2005
Event2005 Non-Volatile Memory Technology Symposium, NVMTS05 - Dallas, TX, United States
Duration: Nov 7 2005Nov 10 2005

Other

Other2005 Non-Volatile Memory Technology Symposium, NVMTS05
CountryUnited States
CityDallas, TX
Period11/7/0511/10/05

Fingerprint

Solid electrolytes
Metallizing
Silver
Germanium
Data storage equipment
Electrolytes
CMOS integrated circuits
Annealing
Copper
Fabrication
Glass
Thin films
Processing
Metals
Temperature

Keywords

  • CMOS processing
  • Electrodeposltlon
  • Non-volatile memory
  • Resistance change
  • Solid electrolyte

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kozicki, M., Balakrishnan, M., Gopalan, C., Ratnakumar, C., & Mitkova, M. (2005). Programmable metallization cell memory based on Ag-Ge-S and Cu-Ge-S solid electrolytes. In 2005 Non-Volatile Memory Technology Symposium, NVMTS05 (pp. 83-89). [1541405] https://doi.org/10.1109/NVMT.2005.1541405

Programmable metallization cell memory based on Ag-Ge-S and Cu-Ge-S solid electrolytes. / Kozicki, Michael; Balakrishnan, M.; Gopalan, C.; Ratnakumar, C.; Mitkova, M.

2005 Non-Volatile Memory Technology Symposium, NVMTS05. 2005. p. 83-89 1541405.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kozicki, M, Balakrishnan, M, Gopalan, C, Ratnakumar, C & Mitkova, M 2005, Programmable metallization cell memory based on Ag-Ge-S and Cu-Ge-S solid electrolytes. in 2005 Non-Volatile Memory Technology Symposium, NVMTS05., 1541405, pp. 83-89, 2005 Non-Volatile Memory Technology Symposium, NVMTS05, Dallas, TX, United States, 11/7/05. https://doi.org/10.1109/NVMT.2005.1541405
Kozicki M, Balakrishnan M, Gopalan C, Ratnakumar C, Mitkova M. Programmable metallization cell memory based on Ag-Ge-S and Cu-Ge-S solid electrolytes. In 2005 Non-Volatile Memory Technology Symposium, NVMTS05. 2005. p. 83-89. 1541405 https://doi.org/10.1109/NVMT.2005.1541405
Kozicki, Michael ; Balakrishnan, M. ; Gopalan, C. ; Ratnakumar, C. ; Mitkova, M. / Programmable metallization cell memory based on Ag-Ge-S and Cu-Ge-S solid electrolytes. 2005 Non-Volatile Memory Technology Symposium, NVMTS05. 2005. pp. 83-89
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