Profiling hydrogen in materials using ion beams

J. F. Ziegler, C. P. Wu, Peter Williams, C. W. White, B. Terreault, B. M U Scherzer, R. L. Schulte, E. J. Schneid, C. W. Magee, E. Ligeon, J. L. 'Ecuyer, W. A. Lanford, F. J. Kuehne, E. A. Kamykowski, W. O. Hofer, A. Guivarc'h, C. H. Filleux, V. R. Deline, C. A. Evans, B. L. CohenG. J. Clark, W. K. Chu, C. Brassard, R. S. Blewer, R. Behrisch, B. R. Appleton, D. D. Allred

Research output: Contribution to journalArticle

163 Citations (Scopus)

Abstract

Over the last few years many ion beam techniques have been reported for the profiling of hydrogen in materials. We have evaluated nine of these using similar samples of hydrogen ion-implanted into silicon. When possible the samples were analysed using two or more techniques to confirm the ion-implanted accuracy. We report the results of this work which has produced a consensus profile of H in silicon which is useful as a calibration standard. The analytical techniques used have capabilities ranging from very high depth resolution (≈50 A ̊) and high sensitivity (< 1 ppm) to deep probes for hydrogen which can sample throughout thin sheets (up to 0.2 mm thick).

Original languageEnglish (US)
Pages (from-to)19-39
Number of pages21
JournalNuclear Instruments and Methods
Volume149
Issue number1-3
DOIs
StatePublished - 1978
Externally publishedYes

Fingerprint

Silicon
Ion beams
Hydrogen
Ions
Calibration
Protons

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Ziegler, J. F., Wu, C. P., Williams, P., White, C. W., Terreault, B., Scherzer, B. M. U., ... Allred, D. D. (1978). Profiling hydrogen in materials using ion beams. Nuclear Instruments and Methods, 149(1-3), 19-39. https://doi.org/10.1016/0029-554X(78)90834-0

Profiling hydrogen in materials using ion beams. / Ziegler, J. F.; Wu, C. P.; Williams, Peter; White, C. W.; Terreault, B.; Scherzer, B. M U; Schulte, R. L.; Schneid, E. J.; Magee, C. W.; Ligeon, E.; 'Ecuyer, J. L.; Lanford, W. A.; Kuehne, F. J.; Kamykowski, E. A.; Hofer, W. O.; Guivarc'h, A.; Filleux, C. H.; Deline, V. R.; Evans, C. A.; Cohen, B. L.; Clark, G. J.; Chu, W. K.; Brassard, C.; Blewer, R. S.; Behrisch, R.; Appleton, B. R.; Allred, D. D.

In: Nuclear Instruments and Methods, Vol. 149, No. 1-3, 1978, p. 19-39.

Research output: Contribution to journalArticle

Ziegler, JF, Wu, CP, Williams, P, White, CW, Terreault, B, Scherzer, BMU, Schulte, RL, Schneid, EJ, Magee, CW, Ligeon, E, 'Ecuyer, JL, Lanford, WA, Kuehne, FJ, Kamykowski, EA, Hofer, WO, Guivarc'h, A, Filleux, CH, Deline, VR, Evans, CA, Cohen, BL, Clark, GJ, Chu, WK, Brassard, C, Blewer, RS, Behrisch, R, Appleton, BR & Allred, DD 1978, 'Profiling hydrogen in materials using ion beams', Nuclear Instruments and Methods, vol. 149, no. 1-3, pp. 19-39. https://doi.org/10.1016/0029-554X(78)90834-0
Ziegler, J. F. ; Wu, C. P. ; Williams, Peter ; White, C. W. ; Terreault, B. ; Scherzer, B. M U ; Schulte, R. L. ; Schneid, E. J. ; Magee, C. W. ; Ligeon, E. ; 'Ecuyer, J. L. ; Lanford, W. A. ; Kuehne, F. J. ; Kamykowski, E. A. ; Hofer, W. O. ; Guivarc'h, A. ; Filleux, C. H. ; Deline, V. R. ; Evans, C. A. ; Cohen, B. L. ; Clark, G. J. ; Chu, W. K. ; Brassard, C. ; Blewer, R. S. ; Behrisch, R. ; Appleton, B. R. ; Allred, D. D. / Profiling hydrogen in materials using ion beams. In: Nuclear Instruments and Methods. 1978 ; Vol. 149, No. 1-3. pp. 19-39.
@article{ad32f5983e0c429f9e9e8b889b380fa5,
title = "Profiling hydrogen in materials using ion beams",
abstract = "Over the last few years many ion beam techniques have been reported for the profiling of hydrogen in materials. We have evaluated nine of these using similar samples of hydrogen ion-implanted into silicon. When possible the samples were analysed using two or more techniques to confirm the ion-implanted accuracy. We report the results of this work which has produced a consensus profile of H in silicon which is useful as a calibration standard. The analytical techniques used have capabilities ranging from very high depth resolution (≈50 A ̊) and high sensitivity (< 1 ppm) to deep probes for hydrogen which can sample throughout thin sheets (up to 0.2 mm thick).",
author = "Ziegler, {J. F.} and Wu, {C. P.} and Peter Williams and White, {C. W.} and B. Terreault and Scherzer, {B. M U} and Schulte, {R. L.} and Schneid, {E. J.} and Magee, {C. W.} and E. Ligeon and 'Ecuyer, {J. L.} and Lanford, {W. A.} and Kuehne, {F. J.} and Kamykowski, {E. A.} and Hofer, {W. O.} and A. Guivarc'h and Filleux, {C. H.} and Deline, {V. R.} and Evans, {C. A.} and Cohen, {B. L.} and Clark, {G. J.} and Chu, {W. K.} and C. Brassard and Blewer, {R. S.} and R. Behrisch and Appleton, {B. R.} and Allred, {D. D.}",
year = "1978",
doi = "10.1016/0029-554X(78)90834-0",
language = "English (US)",
volume = "149",
pages = "19--39",
journal = "Nuclear Instruments and Methods",
issn = "0029-554X",
publisher = "Elsevier BV",
number = "1-3",

}

TY - JOUR

T1 - Profiling hydrogen in materials using ion beams

AU - Ziegler, J. F.

AU - Wu, C. P.

AU - Williams, Peter

AU - White, C. W.

AU - Terreault, B.

AU - Scherzer, B. M U

AU - Schulte, R. L.

AU - Schneid, E. J.

AU - Magee, C. W.

AU - Ligeon, E.

AU - 'Ecuyer, J. L.

AU - Lanford, W. A.

AU - Kuehne, F. J.

AU - Kamykowski, E. A.

AU - Hofer, W. O.

AU - Guivarc'h, A.

AU - Filleux, C. H.

AU - Deline, V. R.

AU - Evans, C. A.

AU - Cohen, B. L.

AU - Clark, G. J.

AU - Chu, W. K.

AU - Brassard, C.

AU - Blewer, R. S.

AU - Behrisch, R.

AU - Appleton, B. R.

AU - Allred, D. D.

PY - 1978

Y1 - 1978

N2 - Over the last few years many ion beam techniques have been reported for the profiling of hydrogen in materials. We have evaluated nine of these using similar samples of hydrogen ion-implanted into silicon. When possible the samples were analysed using two or more techniques to confirm the ion-implanted accuracy. We report the results of this work which has produced a consensus profile of H in silicon which is useful as a calibration standard. The analytical techniques used have capabilities ranging from very high depth resolution (≈50 A ̊) and high sensitivity (< 1 ppm) to deep probes for hydrogen which can sample throughout thin sheets (up to 0.2 mm thick).

AB - Over the last few years many ion beam techniques have been reported for the profiling of hydrogen in materials. We have evaluated nine of these using similar samples of hydrogen ion-implanted into silicon. When possible the samples were analysed using two or more techniques to confirm the ion-implanted accuracy. We report the results of this work which has produced a consensus profile of H in silicon which is useful as a calibration standard. The analytical techniques used have capabilities ranging from very high depth resolution (≈50 A ̊) and high sensitivity (< 1 ppm) to deep probes for hydrogen which can sample throughout thin sheets (up to 0.2 mm thick).

UR - http://www.scopus.com/inward/record.url?scp=0017910670&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0017910670&partnerID=8YFLogxK

U2 - 10.1016/0029-554X(78)90834-0

DO - 10.1016/0029-554X(78)90834-0

M3 - Article

AN - SCOPUS:0017910670

VL - 149

SP - 19

EP - 39

JO - Nuclear Instruments and Methods

JF - Nuclear Instruments and Methods

SN - 0029-554X

IS - 1-3

ER -