Profiling electric fields in GaN/InGaN/GaN single quantum wells by electron holography

Juan Cai; Martha McCartney; Fernando Ponce

Profiling electric fields in GaN/InGaN/GaN single quantum wells by electron holography

Juan Cai, Martha McCartney, Fernando Ponce

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We use electron holography to profile the local internal potential due to spontaneous polarization and piezoelectric effects in strained quantum well structures of wurtzitic group III nitrides. Profiles of the electrostatic potential across a GaN/In _xGa _1-xN/GaN quantum well structure show the existence of internal electric fields of about -2.2 ± 0.16 MV/cm, and a potential drop across the quantum well of 0.6 ± 0.16 V. The electric fields indicate an average indium composition of 15% in the quantum well, for a thickness of 2.7 nm. This indium composition compares well with measurements by energy-disperse spectroscopy of 18 ± 2 %. Screening effect is not observed under these experimental conditions.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Editors	C Wetzel, M Shur, U Mishra, B Gil, K Kishino
Volume	639
State	Published - 2001
Event	GaN and Related Alloys 2000 - Boston, MA, United States Duration: Nov 27 2000 → Dec 1 2000

Other

Other	GaN and Related Alloys 2000
Country/Territory	United States
City	Boston, MA
Period	11/27/00 → 12/1/00

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

@inproceedings{b6259821a7644046b92a93522de1265b,

title = "Profiling electric fields in GaN/InGaN/GaN single quantum wells by electron holography",

abstract = "We use electron holography to profile the local internal potential due to spontaneous polarization and piezoelectric effects in strained quantum well structures of wurtzitic group III nitrides. Profiles of the electrostatic potential across a GaN/In xGa 1-xN/GaN quantum well structure show the existence of internal electric fields of about -2.2 ± 0.16 MV/cm, and a potential drop across the quantum well of 0.6 ± 0.16 V. The electric fields indicate an average indium composition of 15% in the quantum well, for a thickness of 2.7 nm. This indium composition compares well with measurements by energy-disperse spectroscopy of 18 ± 2 %. Screening effect is not observed under these experimental conditions. ",

author = "Juan Cai and Martha McCartney and Fernando Ponce",

year = "2001",

language = "English (US)",

volume = "639",

editor = "C Wetzel and M Shur and U Mishra and B Gil and K Kishino",

booktitle = "Materials Research Society Symposium - Proceedings",

note = "GaN and Related Alloys 2000 ; Conference date: 27-11-2000 Through 01-12-2000",

}

TY - GEN

T1 - Profiling electric fields in GaN/InGaN/GaN single quantum wells by electron holography

AU - Cai, Juan

AU - McCartney, Martha

AU - Ponce, Fernando

PY - 2001

Y1 - 2001

N2 - We use electron holography to profile the local internal potential due to spontaneous polarization and piezoelectric effects in strained quantum well structures of wurtzitic group III nitrides. Profiles of the electrostatic potential across a GaN/In xGa 1-xN/GaN quantum well structure show the existence of internal electric fields of about -2.2 ± 0.16 MV/cm, and a potential drop across the quantum well of 0.6 ± 0.16 V. The electric fields indicate an average indium composition of 15% in the quantum well, for a thickness of 2.7 nm. This indium composition compares well with measurements by energy-disperse spectroscopy of 18 ± 2 %. Screening effect is not observed under these experimental conditions.

AB - We use electron holography to profile the local internal potential due to spontaneous polarization and piezoelectric effects in strained quantum well structures of wurtzitic group III nitrides. Profiles of the electrostatic potential across a GaN/In xGa 1-xN/GaN quantum well structure show the existence of internal electric fields of about -2.2 ± 0.16 MV/cm, and a potential drop across the quantum well of 0.6 ± 0.16 V. The electric fields indicate an average indium composition of 15% in the quantum well, for a thickness of 2.7 nm. This indium composition compares well with measurements by energy-disperse spectroscopy of 18 ± 2 %. Screening effect is not observed under these experimental conditions.

UR - http://www.scopus.com/inward/record.url?scp=0035557662&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035557662&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0035557662

VL - 639

BT - Materials Research Society Symposium - Proceedings

A2 - Wetzel, C

A2 - Shur, M

A2 - Mishra, U

A2 - Gil, B

A2 - Kishino, K

T2 - GaN and Related Alloys 2000

Y2 - 27 November 2000 through 1 December 2000

ER -

Profiling electric fields in GaN/InGaN/GaN single quantum wells by electron holography

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