Profiling electric fields in GaN/InGaN/GaN single quantum wells by electron holography

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Abstract

We use electron holography to profile the local internal potential due to spontaneous polarization and piezoelectric effects in strained quantum well structures of wurtzitic group III nitrides. Profiles of the electrostatic potential across a GaN/In xGa 1-xN/GaN quantum well structure show the existence of internal electric fields of about -2.2 ± 0.16 MV/cm, and a potential drop across the quantum well of 0.6 ± 0.16 V. The electric fields indicate an average indium composition of 15% in the quantum well, for a thickness of 2.7 nm. This indium composition compares well with measurements by energy-disperse spectroscopy of 18 ± 2 %. Screening effect is not observed under these experimental conditions.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsC Wetzel, M Shur, U Mishra, B Gil, K Kishino
Volume639
StatePublished - 2001
EventGaN and Related Alloys 2000 - Boston, MA, United States
Duration: Nov 27 2000Dec 1 2000

Other

OtherGaN and Related Alloys 2000
CountryUnited States
CityBoston, MA
Period11/27/0012/1/00

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Cai, J., McCartney, M., & Ponce, F. (2001). Profiling electric fields in GaN/InGaN/GaN single quantum wells by electron holography. In C. Wetzel, M. Shur, U. Mishra, B. Gil, & K. Kishino (Eds.), Materials Research Society Symposium - Proceedings (Vol. 639)