Abstract
A method of processing ultrathin silicon solar cells by bonding them to a glass carrier is described. The method allows processing large area solar cells on the wafers with down to 10 micron thickness. In the method the rear side of a solar cell is processed on a stand-alone wafer. The cell is then bonded to a glass carrier followed by chemical thinning and processing of the front side. Finally, the cell is de-bonded from the glass carrier. This work applied bonding process previously developed at Arizona State University Flexible Electronics and Display Center to a SHJ solar cell. It was found that bonding material can withstand wafer thinning and acidic cleans used in SHJ processing. We also show that bonding material doesn't contaminate PECVD or sputtering chambers and doesn't prevent achieving very good surface passivation.
| Original language | English (US) |
|---|---|
| Title of host publication | 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 1-2 |
| Number of pages | 2 |
| ISBN (Electronic) | 9781509056057 |
| DOIs | |
| State | Published - May 25 2018 |
| Event | 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States Duration: Jun 25 2017 → Jun 30 2017 |
Other
| Other | 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 |
|---|---|
| Country | United States |
| City | Washington |
| Period | 6/25/17 → 6/30/17 |
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Keywords
- Bonding
- Heterojunction
- Thin Silicon
ASJC Scopus subject areas
- Renewable Energy, Sustainability and the Environment
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
Processing of ultrathin silicon heterojunction solar cells bonded to a glass carrier. / Cotton, Maxwell; Herasimenka, Stanislau; Dauksher, William J.; Howard, Emmett; Strnad, Mark; Bowden, Stuart.
2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-2.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Processing of ultrathin silicon heterojunction solar cells bonded to a glass carrier
AU - Cotton, Maxwell
AU - Herasimenka, Stanislau
AU - Dauksher, William J.
AU - Howard, Emmett
AU - Strnad, Mark
AU - Bowden, Stuart
PY - 2018/5/25
Y1 - 2018/5/25
N2 - A method of processing ultrathin silicon solar cells by bonding them to a glass carrier is described. The method allows processing large area solar cells on the wafers with down to 10 micron thickness. In the method the rear side of a solar cell is processed on a stand-alone wafer. The cell is then bonded to a glass carrier followed by chemical thinning and processing of the front side. Finally, the cell is de-bonded from the glass carrier. This work applied bonding process previously developed at Arizona State University Flexible Electronics and Display Center to a SHJ solar cell. It was found that bonding material can withstand wafer thinning and acidic cleans used in SHJ processing. We also show that bonding material doesn't contaminate PECVD or sputtering chambers and doesn't prevent achieving very good surface passivation.
AB - A method of processing ultrathin silicon solar cells by bonding them to a glass carrier is described. The method allows processing large area solar cells on the wafers with down to 10 micron thickness. In the method the rear side of a solar cell is processed on a stand-alone wafer. The cell is then bonded to a glass carrier followed by chemical thinning and processing of the front side. Finally, the cell is de-bonded from the glass carrier. This work applied bonding process previously developed at Arizona State University Flexible Electronics and Display Center to a SHJ solar cell. It was found that bonding material can withstand wafer thinning and acidic cleans used in SHJ processing. We also show that bonding material doesn't contaminate PECVD or sputtering chambers and doesn't prevent achieving very good surface passivation.
KW - Bonding
KW - Heterojunction
KW - Thin Silicon
UR - http://www.scopus.com/inward/record.url?scp=85048468690&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85048468690&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2017.8366080
DO - 10.1109/PVSC.2017.8366080
M3 - Conference contribution
AN - SCOPUS:85048468690
SP - 1
EP - 2
BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PB - Institute of Electrical and Electronics Engineers Inc.
ER -