Processing of ultrathin silicon heterojunction solar cells bonded to a glass carrier

Maxwell Cotton; Stanislau Herasimenka; William J. Dauksher; Emmett Howard; Mark Strnad; Stuart Bowden

doi:10.1109/PVSC.2017.8366080

Processing of ultrathin silicon heterojunction solar cells bonded to a glass carrier

Maxwell Cotton, Stanislau Herasimenka, William J. Dauksher, Emmett Howard, Mark Strnad, Stuart Bowden

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A method of processing ultrathin silicon solar cells by bonding them to a glass carrier is described. The method allows processing large area solar cells on the wafers with down to 10 micron thickness. In the method the rear side of a solar cell is processed on a stand-alone wafer. The cell is then bonded to a glass carrier followed by chemical thinning and processing of the front side. Finally, the cell is de-bonded from the glass carrier. This work applied bonding process previously developed at Arizona State University Flexible Electronics and Display Center to a SHJ solar cell. It was found that bonding material can withstand wafer thinning and acidic cleans used in SHJ processing. We also show that bonding material doesn't contaminate PECVD or sputtering chambers and doesn't prevent achieving very good surface passivation.

Original language	English (US)
Title of host publication	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-2
Number of pages	2
ISBN (Electronic)	9781509056057
DOIs	https://doi.org/10.1109/PVSC.2017.8366080
State	Published - May 25 2018
Event	44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States Duration: Jun 25 2017 → Jun 30 2017

Other

Other	44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Country	United States
City	Washington
Period	6/25/17 → 6/30/17

Keywords

Bonding
Heterojunction
Thin Silicon

ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/PVSC.2017.8366080

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Cite this

Cotton, M., Herasimenka, S., Dauksher, W. J., Howard, E., Strnad, M., & Bowden, S. (2018). Processing of ultrathin silicon heterojunction solar cells bonded to a glass carrier. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 1-2). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366080

Processing of ultrathin silicon heterojunction solar cells bonded to a glass carrier. / Cotton, Maxwell; Herasimenka, Stanislau; Dauksher, William J.; Howard, Emmett; Strnad, Mark; Bowden, Stuart.

2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-2.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Cotton, M, Herasimenka, S, Dauksher, WJ, Howard, E, Strnad, M & Bowden, S 2018, Processing of ultrathin silicon heterojunction solar cells bonded to a glass carrier. in 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., pp. 1-2, 44th IEEE Photovoltaic Specialist Conference, PVSC 2017, Washington, United States, 6/25/17. https://doi.org/10.1109/PVSC.2017.8366080

@inproceedings{d5104999a3b544e59a52ecfbc1c43517,

title = "Processing of ultrathin silicon heterojunction solar cells bonded to a glass carrier",

abstract = "A method of processing ultrathin silicon solar cells by bonding them to a glass carrier is described. The method allows processing large area solar cells on the wafers with down to 10 micron thickness. In the method the rear side of a solar cell is processed on a stand-alone wafer. The cell is then bonded to a glass carrier followed by chemical thinning and processing of the front side. Finally, the cell is de-bonded from the glass carrier. This work applied bonding process previously developed at Arizona State University Flexible Electronics and Display Center to a SHJ solar cell. It was found that bonding material can withstand wafer thinning and acidic cleans used in SHJ processing. We also show that bonding material doesn't contaminate PECVD or sputtering chambers and doesn't prevent achieving very good surface passivation.",

keywords = "Bonding, Heterojunction, Thin Silicon",

author = "Maxwell Cotton and Stanislau Herasimenka and Dauksher, {William J.} and Emmett Howard and Mark Strnad and Stuart Bowden",

year = "2018",

month = may,

day = "25",

doi = "10.1109/PVSC.2017.8366080",

language = "English (US)",

pages = "1--2",

booktitle = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "44th IEEE Photovoltaic Specialist Conference, PVSC 2017 ; Conference date: 25-06-2017 Through 30-06-2017",

}

TY - GEN

T1 - Processing of ultrathin silicon heterojunction solar cells bonded to a glass carrier

AU - Cotton, Maxwell

AU - Herasimenka, Stanislau

AU - Dauksher, William J.

AU - Howard, Emmett

AU - Strnad, Mark

AU - Bowden, Stuart

PY - 2018/5/25

Y1 - 2018/5/25

N2 - A method of processing ultrathin silicon solar cells by bonding them to a glass carrier is described. The method allows processing large area solar cells on the wafers with down to 10 micron thickness. In the method the rear side of a solar cell is processed on a stand-alone wafer. The cell is then bonded to a glass carrier followed by chemical thinning and processing of the front side. Finally, the cell is de-bonded from the glass carrier. This work applied bonding process previously developed at Arizona State University Flexible Electronics and Display Center to a SHJ solar cell. It was found that bonding material can withstand wafer thinning and acidic cleans used in SHJ processing. We also show that bonding material doesn't contaminate PECVD or sputtering chambers and doesn't prevent achieving very good surface passivation.

AB - A method of processing ultrathin silicon solar cells by bonding them to a glass carrier is described. The method allows processing large area solar cells on the wafers with down to 10 micron thickness. In the method the rear side of a solar cell is processed on a stand-alone wafer. The cell is then bonded to a glass carrier followed by chemical thinning and processing of the front side. Finally, the cell is de-bonded from the glass carrier. This work applied bonding process previously developed at Arizona State University Flexible Electronics and Display Center to a SHJ solar cell. It was found that bonding material can withstand wafer thinning and acidic cleans used in SHJ processing. We also show that bonding material doesn't contaminate PECVD or sputtering chambers and doesn't prevent achieving very good surface passivation.

KW - Bonding

KW - Heterojunction

KW - Thin Silicon

UR - http://www.scopus.com/inward/record.url?scp=85048468690&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85048468690&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2017.8366080

DO - 10.1109/PVSC.2017.8366080

M3 - Conference contribution

AN - SCOPUS:85048468690

SP - 1

EP - 2

BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 44th IEEE Photovoltaic Specialist Conference, PVSC 2017

Y2 - 25 June 2017 through 30 June 2017

ER -