Processing of a uniaxial ferroelectric Pb5Ge3O 11 thin film at 450°C with c-axis orientation

J. J. Lee; Sandwip Dey

doi:10.1063/1.106941

Processing of a uniaxial ferroelectric Pb₅Ge₃O ₁₁ thin film at 450°C with c-axis orientation

J. J. Lee, Sandwip Dey

Chemical Engineering

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

Uniaxial Pb₅Ge₃O₁₁ thin films were successfully fabricated by the sol-gel processing route. Crack-free and c-axis oriented thin films (1600 Å) were observed on (111) Pt-coated Si substrates when heat treated at 450°C for 15 min. The thin films exhibited well saturated P-E hysteresis loops with P_r=3.3 μC/cm², P_s=3.7 μC/cm², and E_c=135 kV/cm. Specifically, a 1600 Å film switched at 2.2 V. The possible applications such as nonvolatile ferroelectric memories and CCD IR image sensors without fatigue or retention problems, are discussed.

Original language	English (US)
Pages (from-to)	2487-2488
Number of pages	2
Journal	Applied Physics Letters
Volume	60
Issue number	20
DOIs	https://doi.org/10.1063/1.106941
State	Published - 1992

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.106941

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title = "Processing of a uniaxial ferroelectric Pb5Ge3O 11 thin film at 450°C with c-axis orientation",

abstract = "Uniaxial Pb5Ge3O11 thin films were successfully fabricated by the sol-gel processing route. Crack-free and c-axis oriented thin films (1600 {\AA}) were observed on (111) Pt-coated Si substrates when heat treated at 450°C for 15 min. The thin films exhibited well saturated P-E hysteresis loops with Pr=3.3 μC/cm2, Ps=3.7 μC/cm2, and Ec=135 kV/cm. Specifically, a 1600 {\AA} film switched at 2.2 V. The possible applications such as nonvolatile ferroelectric memories and CCD IR image sensors without fatigue or retention problems, are discussed.",

author = "Lee, {J. J.} and Sandwip Dey",

year = "1992",

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AU - Lee, J. J.

AU - Dey, Sandwip

PY - 1992

Y1 - 1992

N2 - Uniaxial Pb5Ge3O11 thin films were successfully fabricated by the sol-gel processing route. Crack-free and c-axis oriented thin films (1600 Å) were observed on (111) Pt-coated Si substrates when heat treated at 450°C for 15 min. The thin films exhibited well saturated P-E hysteresis loops with Pr=3.3 μC/cm2, Ps=3.7 μC/cm2, and Ec=135 kV/cm. Specifically, a 1600 Å film switched at 2.2 V. The possible applications such as nonvolatile ferroelectric memories and CCD IR image sensors without fatigue or retention problems, are discussed.

AB - Uniaxial Pb5Ge3O11 thin films were successfully fabricated by the sol-gel processing route. Crack-free and c-axis oriented thin films (1600 Å) were observed on (111) Pt-coated Si substrates when heat treated at 450°C for 15 min. The thin films exhibited well saturated P-E hysteresis loops with Pr=3.3 μC/cm2, Ps=3.7 μC/cm2, and Ec=135 kV/cm. Specifically, a 1600 Å film switched at 2.2 V. The possible applications such as nonvolatile ferroelectric memories and CCD IR image sensors without fatigue or retention problems, are discussed.

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Processing of a uniaxial ferroelectric Pb₅Ge₃O ₁₁ thin film at 450°C with c-axis orientation

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