Processing of a uniaxial ferroelectric Pb5Ge3O 11 thin film at 450°C with c-axis orientation

J. J. Lee, Sandwip Dey

Research output: Contribution to journalArticlepeer-review

24 Scopus citations


Uniaxial Pb5Ge3O11 thin films were successfully fabricated by the sol-gel processing route. Crack-free and c-axis oriented thin films (1600 Å) were observed on (111) Pt-coated Si substrates when heat treated at 450°C for 15 min. The thin films exhibited well saturated P-E hysteresis loops with Pr=3.3 μC/cm2, Ps=3.7 μC/cm2, and Ec=135 kV/cm. Specifically, a 1600 Å film switched at 2.2 V. The possible applications such as nonvolatile ferroelectric memories and CCD IR image sensors without fatigue or retention problems, are discussed.

Original languageEnglish (US)
Pages (from-to)2487-2488
Number of pages2
JournalApplied Physics Letters
Issue number20
StatePublished - 1992

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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