Processing and parameters of sol-gel PZT thin-films for gaas memory applications

Polymeric sol-gel processing represents an IC technology compatible route to fabricate defect-free and compositionally adjustable inorganic nonmetallic thin-films at relatively low temperatures. The critical physicochemical issues which affect the reproducible fabrication of PZT thin-films are outlined. The low field behavior and the high field switching and stability characteristics of PZT thin-films were studied for radiation hard and nonvolatile memory applications. Performance data of integrated PZT thin-films on solid Pt and sputtered Pt layer on silicon-nitrided GaAs substrates are presented and discussed. A compositionally adjustable low field permittivity of 1200, a dielectric breakdown strength exceeding 100 V/μxm, ~1012 polarization reversal cycles, and tm ~ 100 ns were observed. Compatibility of nonlinear PZT thinfilm element processing with GaAs JFET planar VLSI technology is addressed.