Abstract
Polymeric sol-gel processing represents an IC technology compatible route to fabricate defect-free and compositionally adjustable inorganic nonmetallic thin-films at relatively low temperatures. The critical physicochemical issues which affect the reproducible fabrication of PZT thin-films are outlined. The low field behavior and the high field switching and stability characteristics of PZT thin-films were studied for radiation hard and nonvolatile memory applications. Performance data of integrated PZT thin-films on solid Pt and sputtered Pt layer on silicon-nitrided GaAs substrates are presented and discussed. A compositionally adjustable low field permittivity of 1200, a dielectric breakdown strength exceeding 100 V/μxm, ~1012 polarization reversal cycles, and tm ~ 100 ns were observed. Compatibility of nonlinear PZT thinfilm element processing with GaAs JFET planar VLSI technology is addressed.
Original language | English (US) |
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Pages (from-to) | 309-319 |
Number of pages | 11 |
Journal | Ferroelectrics |
Volume | 112 |
Issue number | 1 |
DOIs | |
State | Published - Dec 1 1990 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics