Processing and effects of annealing in sol-gel derived SrBi 2Ta 2O 9, thin films

Robert Barz, Fred Amrhein, Yong Wook Shin, Sandwip Dey

Research output: Chapter in Book/Report/Conference proceedingChapter

12 Citations (Scopus)

Abstract

Sol-gel derived SrBi 2Ta 2O 9(SBT) thin films, stoichiometric and titanium doped, were applied to pure platinum substrates and annealed in oxygen and forming gas. The films were characterized using SEM, EDS, and AES. The data showed that bismuth diffused into the platinum layer during the crystallization anneal in oxygen. Additionally, the forming gas anneal promoted the growth of tall bismuth-platinum towers that originated from the platinum layer and grew through the SET film. Surrounding the towers, local areas of increased roughness and porosity were observed on the SBT film.

Original languageEnglish (US)
Title of host publicationIntegrated Ferroelectrics
Pages65-74
Number of pages10
Volume22
Edition1-4
StatePublished - 1998

Fingerprint

Platinum
Sol-gels
platinum
gels
Annealing
Thin films
Bismuth
annealing
towers
thin films
Processing
Towers
bismuth
Gases
Oxygen
oxygen
Crystallization
Titanium
gases
Energy dispersive spectroscopy

Keywords

  • Ferroelectric thin films
  • Forming gas anneal
  • Morphology of SBT films
  • SBT
  • SrBi Ta O

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics

Cite this

Barz, R., Amrhein, F., Shin, Y. W., & Dey, S. (1998). Processing and effects of annealing in sol-gel derived SrBi 2Ta 2O 9, thin films In Integrated Ferroelectrics (1-4 ed., Vol. 22, pp. 65-74)

Processing and effects of annealing in sol-gel derived SrBi 2Ta 2O 9, thin films . / Barz, Robert; Amrhein, Fred; Shin, Yong Wook; Dey, Sandwip.

Integrated Ferroelectrics. Vol. 22 1-4. ed. 1998. p. 65-74.

Research output: Chapter in Book/Report/Conference proceedingChapter

Barz, R, Amrhein, F, Shin, YW & Dey, S 1998, Processing and effects of annealing in sol-gel derived SrBi 2Ta 2O 9, thin films in Integrated Ferroelectrics. 1-4 edn, vol. 22, pp. 65-74.
Barz R, Amrhein F, Shin YW, Dey S. Processing and effects of annealing in sol-gel derived SrBi 2Ta 2O 9, thin films In Integrated Ferroelectrics. 1-4 ed. Vol. 22. 1998. p. 65-74
Barz, Robert ; Amrhein, Fred ; Shin, Yong Wook ; Dey, Sandwip. / Processing and effects of annealing in sol-gel derived SrBi 2Ta 2O 9, thin films Integrated Ferroelectrics. Vol. 22 1-4. ed. 1998. pp. 65-74
@inbook{b3aa234435f74f22bcd96c7c2cd3fc0b,
title = "Processing and effects of annealing in sol-gel derived SrBi 2Ta 2O 9, thin films",
abstract = "Sol-gel derived SrBi 2Ta 2O 9(SBT) thin films, stoichiometric and titanium doped, were applied to pure platinum substrates and annealed in oxygen and forming gas. The films were characterized using SEM, EDS, and AES. The data showed that bismuth diffused into the platinum layer during the crystallization anneal in oxygen. Additionally, the forming gas anneal promoted the growth of tall bismuth-platinum towers that originated from the platinum layer and grew through the SET film. Surrounding the towers, local areas of increased roughness and porosity were observed on the SBT film.",
keywords = "Ferroelectric thin films, Forming gas anneal, Morphology of SBT films, SBT, SrBi Ta O",
author = "Robert Barz and Fred Amrhein and Shin, {Yong Wook} and Sandwip Dey",
year = "1998",
language = "English (US)",
volume = "22",
pages = "65--74",
booktitle = "Integrated Ferroelectrics",
edition = "1-4",

}

TY - CHAP

T1 - Processing and effects of annealing in sol-gel derived SrBi 2Ta 2O 9, thin films

AU - Barz, Robert

AU - Amrhein, Fred

AU - Shin, Yong Wook

AU - Dey, Sandwip

PY - 1998

Y1 - 1998

N2 - Sol-gel derived SrBi 2Ta 2O 9(SBT) thin films, stoichiometric and titanium doped, were applied to pure platinum substrates and annealed in oxygen and forming gas. The films were characterized using SEM, EDS, and AES. The data showed that bismuth diffused into the platinum layer during the crystallization anneal in oxygen. Additionally, the forming gas anneal promoted the growth of tall bismuth-platinum towers that originated from the platinum layer and grew through the SET film. Surrounding the towers, local areas of increased roughness and porosity were observed on the SBT film.

AB - Sol-gel derived SrBi 2Ta 2O 9(SBT) thin films, stoichiometric and titanium doped, were applied to pure platinum substrates and annealed in oxygen and forming gas. The films were characterized using SEM, EDS, and AES. The data showed that bismuth diffused into the platinum layer during the crystallization anneal in oxygen. Additionally, the forming gas anneal promoted the growth of tall bismuth-platinum towers that originated from the platinum layer and grew through the SET film. Surrounding the towers, local areas of increased roughness and porosity were observed on the SBT film.

KW - Ferroelectric thin films

KW - Forming gas anneal

KW - Morphology of SBT films

KW - SBT

KW - SrBi Ta O

UR - http://www.scopus.com/inward/record.url?scp=0032316286&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032316286&partnerID=8YFLogxK

M3 - Chapter

AN - SCOPUS:0032316286

VL - 22

SP - 65

EP - 74

BT - Integrated Ferroelectrics

ER -