Processing and effects of annealing in sol-gel derived SrBi 2Ta 2O 9, thin films

Robert Barz, Fred Amrhein, Yong Wook Shin, Sandwip Dey

Research output: Chapter in Book/Report/Conference proceedingChapter

12 Scopus citations

Abstract

Sol-gel derived SrBi 2Ta 2O 9(SBT) thin films, stoichiometric and titanium doped, were applied to pure platinum substrates and annealed in oxygen and forming gas. The films were characterized using SEM, EDS, and AES. The data showed that bismuth diffused into the platinum layer during the crystallization anneal in oxygen. Additionally, the forming gas anneal promoted the growth of tall bismuth-platinum towers that originated from the platinum layer and grew through the SET film. Surrounding the towers, local areas of increased roughness and porosity were observed on the SBT film.

Original languageEnglish (US)
Title of host publicationIntegrated Ferroelectrics
Pages65-74
Number of pages10
Volume22
Edition1-4
StatePublished - 1998

Keywords

  • Ferroelectric thin films
  • Forming gas anneal
  • Morphology of SBT films
  • SBT
  • SrBi Ta O

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Processing and effects of annealing in sol-gel derived SrBi <sub>2</sub>Ta <sub>2</sub>O <sub>9</sub>, thin films'. Together they form a unique fingerprint.

  • Cite this

    Barz, R., Amrhein, F., Shin, Y. W., & Dey, S. (1998). Processing and effects of annealing in sol-gel derived SrBi 2Ta 2O 9, thin films In Integrated Ferroelectrics (1-4 ed., Vol. 22, pp. 65-74)