Processing and effects of annealing in sol-gel derived SrBi
            2Ta
            2O
            9, thin films

Robert Barz; Fred Amrhein; Yong Wook Shin; Sandwip Dey

Processing and effects of annealing in sol-gel derived SrBi ₂Ta ₂O ₉, thin films

Robert Barz, Fred Amrhein, Yong Wook Shin, Sandwip Dey

Chemical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Chapter

12 Scopus citations

Abstract

Sol-gel derived SrBi ₂Ta ₂O ₉(SBT) thin films, stoichiometric and titanium doped, were applied to pure platinum substrates and annealed in oxygen and forming gas. The films were characterized using SEM, EDS, and AES. The data showed that bismuth diffused into the platinum layer during the crystallization anneal in oxygen. Additionally, the forming gas anneal promoted the growth of tall bismuth-platinum towers that originated from the platinum layer and grew through the SET film. Surrounding the towers, local areas of increased roughness and porosity were observed on the SBT film.

Original language	English (US)
Title of host publication	Integrated Ferroelectrics
Pages	65-74
Number of pages	10
Volume	22
Edition	1-4
State	Published - 1998

Keywords

Ferroelectric thin films
Forming gas anneal
Morphology of SBT films
SBT
SrBi Ta O

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Physics and Astronomy (miscellaneous)
Condensed Matter Physics

Cite this

@inbook{b3aa234435f74f22bcd96c7c2cd3fc0b,

title = "Processing and effects of annealing in sol-gel derived SrBi 2Ta 2O 9, thin films ",

abstract = "Sol-gel derived SrBi 2Ta 2O 9(SBT) thin films, stoichiometric and titanium doped, were applied to pure platinum substrates and annealed in oxygen and forming gas. The films were characterized using SEM, EDS, and AES. The data showed that bismuth diffused into the platinum layer during the crystallization anneal in oxygen. Additionally, the forming gas anneal promoted the growth of tall bismuth-platinum towers that originated from the platinum layer and grew through the SET film. Surrounding the towers, local areas of increased roughness and porosity were observed on the SBT film. ",

keywords = "Ferroelectric thin films, Forming gas anneal, Morphology of SBT films, SBT, SrBi Ta O",

author = "Robert Barz and Fred Amrhein and Shin, {Yong Wook} and Sandwip Dey",

year = "1998",

language = "English (US)",

volume = "22",

pages = "65--74",

booktitle = "Integrated Ferroelectrics",

edition = "1-4",

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TY - CHAP

T1 - Processing and effects of annealing in sol-gel derived SrBi 2Ta 2O 9, thin films

AU - Barz, Robert

AU - Amrhein, Fred

AU - Shin, Yong Wook

AU - Dey, Sandwip

PY - 1998

Y1 - 1998

N2 - Sol-gel derived SrBi 2Ta 2O 9(SBT) thin films, stoichiometric and titanium doped, were applied to pure platinum substrates and annealed in oxygen and forming gas. The films were characterized using SEM, EDS, and AES. The data showed that bismuth diffused into the platinum layer during the crystallization anneal in oxygen. Additionally, the forming gas anneal promoted the growth of tall bismuth-platinum towers that originated from the platinum layer and grew through the SET film. Surrounding the towers, local areas of increased roughness and porosity were observed on the SBT film.

AB - Sol-gel derived SrBi 2Ta 2O 9(SBT) thin films, stoichiometric and titanium doped, were applied to pure platinum substrates and annealed in oxygen and forming gas. The films were characterized using SEM, EDS, and AES. The data showed that bismuth diffused into the platinum layer during the crystallization anneal in oxygen. Additionally, the forming gas anneal promoted the growth of tall bismuth-platinum towers that originated from the platinum layer and grew through the SET film. Surrounding the towers, local areas of increased roughness and porosity were observed on the SBT film.

KW - Ferroelectric thin films

KW - Forming gas anneal

KW - Morphology of SBT films

KW - SBT

KW - SrBi Ta O

UR - http://www.scopus.com/inward/record.url?scp=0032316286&partnerID=8YFLogxK

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M3 - Chapter

AN - SCOPUS:0032316286

VL - 22

SP - 65

EP - 74

BT - Integrated Ferroelectrics

ER -

Processing and effects of annealing in sol-gel derived SrBi ₂Ta ₂O ₉, thin films

Abstract

Keywords

ASJC Scopus subject areas

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