Process-dependent band structure changes of transition-metal (Ti,Zr,Hf) oxides on Si (100)

C. C. Fulton, G. Lucovsky, R. J. Nemanich

Research output: Contribution to journalArticlepeer-review

66 Scopus citations

Abstract

The Ti, Zr and Hf oxides were deposited on ultrathin (∼0.5 nm) SiO 2 buffer layers. The metastable states which give rise to large changes in the band alignments of these oxides with respect to the Si substrate were identified. It was shown that the magnitude of the shift of high-k valence band differs for the three materials and is dependent on both the SiO 2 buffer layer thickness and annealing temperature. A model was proposed where excess oxygen accumulates near the high-k-SiO 2 interface providing electronic states, which are available to electrons that tunnel from the substrate.

Original languageEnglish (US)
Pages (from-to)580-582
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number4
DOIs
StatePublished - Jan 26 2004

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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