Probing Defects in MoS2 Van der Waals Crystal through Deep-Level Transient Spectroscopy

Łukasz Gelczuk, Jan Kopaczek, Paweł Scharoch, Katarzyna Komorowska, Mark Blei, Sefaattin Tongay, Robert Kudrawiec

Research output: Contribution to journalArticlepeer-review

Abstract

The electrical performance of transition metal dichalcogenides (TMDCs) is strongly affected by the quality of electrical metal contacts and the formation of electrically active defects. Herein, deep-level transient spectroscopy (DLTS) is used for direct probing of deep-level defects in the bandgap of single MoS2 van der Waals crystal. Standard DLTS temperature spectra reveal a deep-level trap located at about 0.36 eV below the conduction band edge. This trap is tentatively attributed to sulfur vacancies and localized on the electronic band structure of MoS2, obtained within the density functional theory (DFT), and matched with experimentally studied electronic band structure, by absorption and contactless electroreflectance (CER) spectroscopy.

Original languageEnglish (US)
Article number2000381
JournalPhysica Status Solidi - Rapid Research Letters
Volume14
Issue number12
DOIs
StatePublished - Dec 2020

Keywords

  • MoS
  • deep-level transient spectroscopy
  • native defects
  • van der Waals crystals

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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