Printable, flexible, and stretchable forms of ultrananocrystalline diamond with applications in thermal management

Tae Ho Kim; Won Mook Choi; Dae Hyeong Kim; Matthew A. Meitl; Etienne Menard; Hanqing Jiang; John A. Carlisle; John A. Rogers

doi:10.1002/adma.200702434

Printable, flexible, and stretchable forms of ultrananocrystalline diamond with applications in thermal management

Tae Ho Kim, Won Mook Choi, Dae Hyeong Kim, Matthew A. Meitl, Etienne Menard, Hanqing Jiang, John A. Carlisle, John A. Rogers

Research output: Contribution to journal › Article › peer-review

72 Scopus citations

Abstract

Etching and printing techniques that are used to manipulate thin film microstructures of diamond in a way that allows integration with substrates and creation of structural forms that are incompatible with conventional processing was investigated. A SiO₂ layer was deposited by plasma-enhanced chemical vapor deposition (PECVD) using SiH₄ and N₂O at 250°C. Photolithography with AZ 5214 defined a pattern of photoresist (PR) on the surface of the SiO₂ (300 nm)/UNCD (400 nm)/SiO₂/Si substrate. The PR served as a mask for RIE etching of the PECVD SiO₂ layer with a Cf₄ plasma. It was observed that the resulting capabilities could be useful for certain applications, such as those in thermal management for plastic electronics.

Original language	English (US)
Pages (from-to)	2171-2176
Number of pages	6
Journal	Advanced Materials
Volume	20
Issue number	11
DOIs	https://doi.org/10.1002/adma.200702434
State	Published - Jun 4 2008

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1002/adma.200702434

Cite this

@article{4de1efe7faf54c4099116e3e721608b8,

title = "Printable, flexible, and stretchable forms of ultrananocrystalline diamond with applications in thermal management",

abstract = "Etching and printing techniques that are used to manipulate thin film microstructures of diamond in a way that allows integration with substrates and creation of structural forms that are incompatible with conventional processing was investigated. A SiO2 layer was deposited by plasma-enhanced chemical vapor deposition (PECVD) using SiH4 and N2O at 250°C. Photolithography with AZ 5214 defined a pattern of photoresist (PR) on the surface of the SiO2 (300 nm)/UNCD (400 nm)/SiO2/Si substrate. The PR served as a mask for RIE etching of the PECVD SiO2 layer with a Cf4 plasma. It was observed that the resulting capabilities could be useful for certain applications, such as those in thermal management for plastic electronics.",

author = "Kim, {Tae Ho} and Choi, {Won Mook} and Kim, {Dae Hyeong} and Meitl, {Matthew A.} and Etienne Menard and Hanqing Jiang and Carlisle, {John A.} and Rogers, {John A.}",

year = "2008",

month = jun,

day = "4",

doi = "10.1002/adma.200702434",

language = "English (US)",

volume = "20",

pages = "2171--2176",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-VCH Verlag",

number = "11",

}

TY - JOUR

T1 - Printable, flexible, and stretchable forms of ultrananocrystalline diamond with applications in thermal management

AU - Kim, Tae Ho

AU - Choi, Won Mook

AU - Kim, Dae Hyeong

AU - Meitl, Matthew A.

AU - Menard, Etienne

AU - Jiang, Hanqing

AU - Carlisle, John A.

AU - Rogers, John A.

PY - 2008/6/4

Y1 - 2008/6/4

N2 - Etching and printing techniques that are used to manipulate thin film microstructures of diamond in a way that allows integration with substrates and creation of structural forms that are incompatible with conventional processing was investigated. A SiO2 layer was deposited by plasma-enhanced chemical vapor deposition (PECVD) using SiH4 and N2O at 250°C. Photolithography with AZ 5214 defined a pattern of photoresist (PR) on the surface of the SiO2 (300 nm)/UNCD (400 nm)/SiO2/Si substrate. The PR served as a mask for RIE etching of the PECVD SiO2 layer with a Cf4 plasma. It was observed that the resulting capabilities could be useful for certain applications, such as those in thermal management for plastic electronics.

AB - Etching and printing techniques that are used to manipulate thin film microstructures of diamond in a way that allows integration with substrates and creation of structural forms that are incompatible with conventional processing was investigated. A SiO2 layer was deposited by plasma-enhanced chemical vapor deposition (PECVD) using SiH4 and N2O at 250°C. Photolithography with AZ 5214 defined a pattern of photoresist (PR) on the surface of the SiO2 (300 nm)/UNCD (400 nm)/SiO2/Si substrate. The PR served as a mask for RIE etching of the PECVD SiO2 layer with a Cf4 plasma. It was observed that the resulting capabilities could be useful for certain applications, such as those in thermal management for plastic electronics.

UR - http://www.scopus.com/inward/record.url?scp=53549109807&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=53549109807&partnerID=8YFLogxK

U2 - 10.1002/adma.200702434

DO - 10.1002/adma.200702434

M3 - Article

AN - SCOPUS:53549109807

SN - 0935-9648

VL - 20

SP - 2171

EP - 2176

JO - Advanced Materials

JF - Advanced Materials

IS - 11

ER -

Printable, flexible, and stretchable forms of ultrananocrystalline diamond with applications in thermal management

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this