Pressure dependence of Cu, Ag, and (formula presented) Schottky barrier heights

Nathan Newman, P. Phatak, C. S. Gworek, E. R. Weber, B. T. Jonker

Research output: Contribution to journalArticle

Abstract

The Schottky barrier height of intimate Cu/GaAs (110), Ag/GaAs (110), and Fe/GaAs (100) has been measured as a function of hydrostatic pressure. The pressure dependence of the Cu and (formula presented) barrier heights of (formula presented) fall within the uncertainty of the pressure dependence of the (formula presented) defect and track the predicted value of (formula presented)-rich interfaces. In contrast, the pressure dependence of the (formula presented) Schottky barrier height of (formula presented) does not fall within experimental error of these values and falls at nearly the predicted dependence of defect-free interfaces.

Original languageEnglish (US)
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume64
Issue number4
DOIs
StatePublished - Jan 1 2001
Externally publishedYes

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pressure dependence
Defects
Hydrostatic pressure
defects
hydrostatic pressure
gallium arsenide
Uncertainty

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Pressure dependence of Cu, Ag, and (formula presented) Schottky barrier heights. / Newman, Nathan; Phatak, P.; Gworek, C. S.; Weber, E. R.; Jonker, B. T.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 64, No. 4, 01.01.2001.

Research output: Contribution to journalArticle

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AU - Jonker, B. T.

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