Pressure dependence of Cu, Ag, and Fe/n-GaAs Schottky barrier heights

C. S. Gworek; P. Phatak; B. T. Jonker; E. R. Weber; Nathan Newman

Pressure dependence of Cu, Ag, and Fe/n-GaAs Schottky barrier heights

C. S. Gworek, P. Phatak, B. T. Jonker, E. R. Weber, Nathan Newman

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Abstract

The Schottky barrier height of intimate Cu/GaAs (110), Ag/GaAs (110), and Fe/GaAs (100) has been measured as a function of hydrostatic pressure. The pressure dependence of the Cu and Ag/n-GaAs barrier heights of 97±4 meV/GPa fall within the uncertainty of the pressure dependence of the As_Ga defect and track the predicted value of As_Ga-rich interfaces. In contrast, the pressure dependence of the Fe/n-GaAs(100) Schottky barrier height of 109±7 meV/GPa does not fall within experimental error of these values and falls at nearly the predicted dependence of defect-free interfaces.

Original language	English (US)
Article number	045322
Pages (from-to)	453221-453226
Number of pages	6
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	64
Issue number	4
State	Published - Jul 15 2001

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Cite this

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title = "Pressure dependence of Cu, Ag, and Fe/n-GaAs Schottky barrier heights",

abstract = "The Schottky barrier height of intimate Cu/GaAs (110), Ag/GaAs (110), and Fe/GaAs (100) has been measured as a function of hydrostatic pressure. The pressure dependence of the Cu and Ag/n-GaAs barrier heights of 97±4 meV/GPa fall within the uncertainty of the pressure dependence of the AsGa defect and track the predicted value of AsGa-rich interfaces. In contrast, the pressure dependence of the Fe/n-GaAs(100) Schottky barrier height of 109±7 meV/GPa does not fall within experimental error of these values and falls at nearly the predicted dependence of defect-free interfaces.",

author = "Gworek, {C. S.} and P. Phatak and Jonker, {B. T.} and Weber, {E. R.} and Nathan Newman",

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T1 - Pressure dependence of Cu, Ag, and Fe/n-GaAs Schottky barrier heights

AU - Gworek, C. S.

AU - Phatak, P.

AU - Jonker, B. T.

AU - Weber, E. R.

AU - Newman, Nathan

PY - 2001/7/15

Y1 - 2001/7/15

N2 - The Schottky barrier height of intimate Cu/GaAs (110), Ag/GaAs (110), and Fe/GaAs (100) has been measured as a function of hydrostatic pressure. The pressure dependence of the Cu and Ag/n-GaAs barrier heights of 97±4 meV/GPa fall within the uncertainty of the pressure dependence of the AsGa defect and track the predicted value of AsGa-rich interfaces. In contrast, the pressure dependence of the Fe/n-GaAs(100) Schottky barrier height of 109±7 meV/GPa does not fall within experimental error of these values and falls at nearly the predicted dependence of defect-free interfaces.

AB - The Schottky barrier height of intimate Cu/GaAs (110), Ag/GaAs (110), and Fe/GaAs (100) has been measured as a function of hydrostatic pressure. The pressure dependence of the Cu and Ag/n-GaAs barrier heights of 97±4 meV/GPa fall within the uncertainty of the pressure dependence of the AsGa defect and track the predicted value of AsGa-rich interfaces. In contrast, the pressure dependence of the Fe/n-GaAs(100) Schottky barrier height of 109±7 meV/GPa does not fall within experimental error of these values and falls at nearly the predicted dependence of defect-free interfaces.

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M3 - Article

AN - SCOPUS:0035878423

SN - 0163-1829

VL - 64

SP - 453221

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JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 4

M1 - 045322

ER -

Pressure dependence of Cu, Ag, and Fe/n-GaAs Schottky barrier heights

Abstract

ASJC Scopus subject areas

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