The Schottky barrier height of intimate Cu/GaAs (110), Ag/GaAs (110), and Fe/GaAs (100) has been measured as a function of hydrostatic pressure. The pressure dependence of the Cu and Ag/n-GaAs barrier heights of 97±4 meV/GPa fall within the uncertainty of the pressure dependence of the AsGa defect and track the predicted value of AsGa-rich interfaces. In contrast, the pressure dependence of the Fe/n-GaAs(100) Schottky barrier height of 109±7 meV/GPa does not fall within experimental error of these values and falls at nearly the predicted dependence of defect-free interfaces.
|Original language||English (US)|
|Number of pages||6|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - Jul 15 2001|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics