Pressure coefficients for direct optical transitions in MoS2, MoSe2, WS2, and WSe2 crystals and semiconductor to metal transitions

F. Dybała, M. P. Polak, J. Kopaczek, P. Scharoch, K. Wu, Sefaattin Tongay, R. Kudrawiec

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Abstract

The electronic band structure of MoS2, MoSe2, WS2, and WSe2, crystals has been studied at various hydrostatic pressures experimentally by photoreflectance (PR) spectroscopy and theoretically within the density functional theory (DFT). In the PR spectra direct optical transitions (A and B) have been clearly observed and pressure coefficients have been determined for these transitions to be: α A = 2.0 ± 0.1 and α B = 3.6 ± 0.1 meV/kbar for MoS2, α A = 2.3 ± 0.1 and α B = 4.0 ± 0.1 meV/kbar for MoSe2, α A = 2.6 ± 0.1 and α B = 4.1 ± 0.1 meV/kbar for WS2, α A = 3.4 ± 0.1 and α B = 5.0 ± 0.5 meV/kbar for WSe2. It has been found that these coefficients are in an excellent agreement with theoretical predictions. In addition, a comparative study of different computational DFT approaches has been performed and analyzed. For indirect gap the pressure coefficient have been determined theoretically to be -7.9, -5.51, -6.11, and -3.79, meV/kbar for MoS2, MoSe2, WS2, and WSe2, respectively. The negative values of this coefficients imply a narrowing of the fundamental band gap with the increase in hydrostatic pressure and a semiconductor to metal transition for MoS2, MoSe2, WS2, and WSe2, crystals at around 140, 180, 190, and 240 kbar, respectively.

Original languageEnglish (US)
Article number26663
JournalScientific Reports
Volume6
DOIs
StatePublished - May 24 2016

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optical transition
transition metals
coefficients
hydrostatic pressure
crystals
density functional theory
predictions
electronics
spectroscopy

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Pressure coefficients for direct optical transitions in MoS2, MoSe2, WS2, and WSe2 crystals and semiconductor to metal transitions. / Dybała, F.; Polak, M. P.; Kopaczek, J.; Scharoch, P.; Wu, K.; Tongay, Sefaattin; Kudrawiec, R.

In: Scientific Reports, Vol. 6, 26663, 24.05.2016.

Research output: Contribution to journalArticle

@article{dfa2fa5b70ee4dcf8811038d320e2b22,
title = "Pressure coefficients for direct optical transitions in MoS2, MoSe2, WS2, and WSe2 crystals and semiconductor to metal transitions",
abstract = "The electronic band structure of MoS2, MoSe2, WS2, and WSe2, crystals has been studied at various hydrostatic pressures experimentally by photoreflectance (PR) spectroscopy and theoretically within the density functional theory (DFT). In the PR spectra direct optical transitions (A and B) have been clearly observed and pressure coefficients have been determined for these transitions to be: α A = 2.0 ± 0.1 and α B = 3.6 ± 0.1 meV/kbar for MoS2, α A = 2.3 ± 0.1 and α B = 4.0 ± 0.1 meV/kbar for MoSe2, α A = 2.6 ± 0.1 and α B = 4.1 ± 0.1 meV/kbar for WS2, α A = 3.4 ± 0.1 and α B = 5.0 ± 0.5 meV/kbar for WSe2. It has been found that these coefficients are in an excellent agreement with theoretical predictions. In addition, a comparative study of different computational DFT approaches has been performed and analyzed. For indirect gap the pressure coefficient have been determined theoretically to be -7.9, -5.51, -6.11, and -3.79, meV/kbar for MoS2, MoSe2, WS2, and WSe2, respectively. The negative values of this coefficients imply a narrowing of the fundamental band gap with the increase in hydrostatic pressure and a semiconductor to metal transition for MoS2, MoSe2, WS2, and WSe2, crystals at around 140, 180, 190, and 240 kbar, respectively.",
author = "F. Dybała and Polak, {M. P.} and J. Kopaczek and P. Scharoch and K. Wu and Sefaattin Tongay and R. Kudrawiec",
year = "2016",
month = "5",
day = "24",
doi = "10.1038/srep26663",
language = "English (US)",
volume = "6",
journal = "Scientific Reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",

}

TY - JOUR

T1 - Pressure coefficients for direct optical transitions in MoS2, MoSe2, WS2, and WSe2 crystals and semiconductor to metal transitions

AU - Dybała, F.

AU - Polak, M. P.

AU - Kopaczek, J.

AU - Scharoch, P.

AU - Wu, K.

AU - Tongay, Sefaattin

AU - Kudrawiec, R.

PY - 2016/5/24

Y1 - 2016/5/24

N2 - The electronic band structure of MoS2, MoSe2, WS2, and WSe2, crystals has been studied at various hydrostatic pressures experimentally by photoreflectance (PR) spectroscopy and theoretically within the density functional theory (DFT). In the PR spectra direct optical transitions (A and B) have been clearly observed and pressure coefficients have been determined for these transitions to be: α A = 2.0 ± 0.1 and α B = 3.6 ± 0.1 meV/kbar for MoS2, α A = 2.3 ± 0.1 and α B = 4.0 ± 0.1 meV/kbar for MoSe2, α A = 2.6 ± 0.1 and α B = 4.1 ± 0.1 meV/kbar for WS2, α A = 3.4 ± 0.1 and α B = 5.0 ± 0.5 meV/kbar for WSe2. It has been found that these coefficients are in an excellent agreement with theoretical predictions. In addition, a comparative study of different computational DFT approaches has been performed and analyzed. For indirect gap the pressure coefficient have been determined theoretically to be -7.9, -5.51, -6.11, and -3.79, meV/kbar for MoS2, MoSe2, WS2, and WSe2, respectively. The negative values of this coefficients imply a narrowing of the fundamental band gap with the increase in hydrostatic pressure and a semiconductor to metal transition for MoS2, MoSe2, WS2, and WSe2, crystals at around 140, 180, 190, and 240 kbar, respectively.

AB - The electronic band structure of MoS2, MoSe2, WS2, and WSe2, crystals has been studied at various hydrostatic pressures experimentally by photoreflectance (PR) spectroscopy and theoretically within the density functional theory (DFT). In the PR spectra direct optical transitions (A and B) have been clearly observed and pressure coefficients have been determined for these transitions to be: α A = 2.0 ± 0.1 and α B = 3.6 ± 0.1 meV/kbar for MoS2, α A = 2.3 ± 0.1 and α B = 4.0 ± 0.1 meV/kbar for MoSe2, α A = 2.6 ± 0.1 and α B = 4.1 ± 0.1 meV/kbar for WS2, α A = 3.4 ± 0.1 and α B = 5.0 ± 0.5 meV/kbar for WSe2. It has been found that these coefficients are in an excellent agreement with theoretical predictions. In addition, a comparative study of different computational DFT approaches has been performed and analyzed. For indirect gap the pressure coefficient have been determined theoretically to be -7.9, -5.51, -6.11, and -3.79, meV/kbar for MoS2, MoSe2, WS2, and WSe2, respectively. The negative values of this coefficients imply a narrowing of the fundamental band gap with the increase in hydrostatic pressure and a semiconductor to metal transition for MoS2, MoSe2, WS2, and WSe2, crystals at around 140, 180, 190, and 240 kbar, respectively.

UR - http://www.scopus.com/inward/record.url?scp=84971216344&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84971216344&partnerID=8YFLogxK

U2 - 10.1038/srep26663

DO - 10.1038/srep26663

M3 - Article

AN - SCOPUS:84971216344

VL - 6

JO - Scientific Reports

JF - Scientific Reports

SN - 2045-2322

M1 - 26663

ER -