TY - JOUR
T1 - Preparation of iridium films by liquid source metalorganic chemical vapor deposition
AU - Dey, Sandwip
AU - Goswami, Jaydeb
AU - Wang, Chang Gong
AU - Majhi, Prashant
PY - 1999/9/15
Y1 - 1999/9/15
N2 - A potentially manufacturable liquid source metalorganic chemical vapor deposition process was successfully applied to deposit Iridium films on a variety of substrates. The depositions of Ir were carried out in the temperature range of 300-450 °C from tetrahydrofuran (THF) solution of CH3CpIrCOD (Cp = cyclopentadienyl, COD = cyclooctadiene) in a low-pressure, hot-wall reactor. Oxygen assisted pyrolysis of the precursor at 350 °C resulted in a remarkably high Ir growth rate of 70 nm/min on IrOx/Si substrate. Additionally, Ir on Si exhibited a room-temperature resistivity of 10.2 μΩcm. The as-deposited polycrystalline Ir films were highly reflecting, dense, and fine grained.
AB - A potentially manufacturable liquid source metalorganic chemical vapor deposition process was successfully applied to deposit Iridium films on a variety of substrates. The depositions of Ir were carried out in the temperature range of 300-450 °C from tetrahydrofuran (THF) solution of CH3CpIrCOD (Cp = cyclopentadienyl, COD = cyclooctadiene) in a low-pressure, hot-wall reactor. Oxygen assisted pyrolysis of the precursor at 350 °C resulted in a remarkably high Ir growth rate of 70 nm/min on IrOx/Si substrate. Additionally, Ir on Si exhibited a room-temperature resistivity of 10.2 μΩcm. The as-deposited polycrystalline Ir films were highly reflecting, dense, and fine grained.
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U2 - 10.1143/jjap.38.l1052
DO - 10.1143/jjap.38.l1052
M3 - Article
AN - SCOPUS:0033309513
SN - 0021-4922
VL - 38
SP - L1052-L1054
JO - Japanese Journal of Applied Physics, Part 2: Letters
JF - Japanese Journal of Applied Physics, Part 2: Letters
IS - 9 A/B
ER -