Preparation of iridium films by liquid source metalorganic chemical vapor deposition

Sandwip Dey, Jaydeb Goswami, Chang Gong Wang, Prashant Majhi

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

A potentially manufacturable liquid source metalorganic chemical vapor deposition process was successfully applied to deposit Iridium films on a variety of substrates. The depositions of Ir were carried out in the temperature range of 300-450 °C from tetrahydrofuran (THF) solution of CH3CpIrCOD (Cp = cyclopentadienyl, COD = cyclooctadiene) in a low-pressure, hot-wall reactor. Oxygen assisted pyrolysis of the precursor at 350 °C resulted in a remarkably high Ir growth rate of 70 nm/min on IrOx/Si substrate. Additionally, Ir on Si exhibited a room-temperature resistivity of 10.2 μΩcm. The as-deposited polycrystalline Ir films were highly reflecting, dense, and fine grained.

Original languageEnglish (US)
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume38
Issue number9 A/B
StatePublished - Sep 15 1999

Fingerprint

Iridium
Metallorganic chemical vapor deposition
iridium
metalorganic chemical vapor deposition
preparation
crack opening displacement
Liquids
Substrates
liquids
tetrahydrofuran
pyrolysis
Pyrolysis
Deposits
low pressure
deposits
reactors
Temperature
electrical resistivity
Oxygen
room temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Preparation of iridium films by liquid source metalorganic chemical vapor deposition. / Dey, Sandwip; Goswami, Jaydeb; Wang, Chang Gong; Majhi, Prashant.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 38, No. 9 A/B, 15.09.1999.

Research output: Contribution to journalArticle

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