A potentially manufacturable liquid source metalorganic chemical vapor deposition process was successfully applied to deposit Iridium films on a variety of substrates. The depositions of Ir were carried out in the temperature range of 300-450 °C from tetrahydrofuran (THF) solution of CH3CpIrCOD (Cp = cyclopentadienyl, COD = cyclooctadiene) in a low-pressure, hot-wall reactor. Oxygen assisted pyrolysis of the precursor at 350 °C resulted in a remarkably high Ir growth rate of 70 nm/min on IrOx/Si substrate. Additionally, Ir on Si exhibited a room-temperature resistivity of 10.2 μΩcm. The as-deposited polycrystalline Ir films were highly reflecting, dense, and fine grained.
|Original language||English (US)|
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Issue number||9 A/B|
|State||Published - Sep 15 1999|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)