Preparation of iridium films by liquid source metalorganic chemical vapor deposition

Sandwip Dey, Jaydeb Goswami, Chang Gong Wang, Prashant Majhi

Research output: Contribution to journalArticlepeer-review

30 Scopus citations

Abstract

A potentially manufacturable liquid source metalorganic chemical vapor deposition process was successfully applied to deposit Iridium films on a variety of substrates. The depositions of Ir were carried out in the temperature range of 300-450 °C from tetrahydrofuran (THF) solution of CH3CpIrCOD (Cp = cyclopentadienyl, COD = cyclooctadiene) in a low-pressure, hot-wall reactor. Oxygen assisted pyrolysis of the precursor at 350 °C resulted in a remarkably high Ir growth rate of 70 nm/min on IrOx/Si substrate. Additionally, Ir on Si exhibited a room-temperature resistivity of 10.2 μΩcm. The as-deposited polycrystalline Ir films were highly reflecting, dense, and fine grained.

Original languageEnglish (US)
Pages (from-to)L1052-L1054
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume38
Issue number9 A/B
DOIs
StatePublished - Sep 15 1999

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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