Preparation and characterization of MgO surfaces by reflection electron microscopy

Peter Crozier, M. Gajdardziska-Josifovska, J. M. Cowley

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

We have employed several different methods to prepare (100) and (111) surfaces of MgO crystals. (100) surfaces prepared by simple cleaving give good reflection high energy electron diffraction (RHEED) patterns and surfaces with a high density of coarse steps. Chemical polishing of this surface results in a roughening of the topography whilst annealing in oxygen considerably smoothens the surfaces although they appear to be contaminated. Under certain conditions we find that the MgO crystals will cleave along the (111) plane. Both cleaved and mechanically polished (111) surfaces are atomically flat and reconstructed after oxygen annealing.

Original languageEnglish (US)
Pages (from-to)426-438
Number of pages13
JournalMicroscopy Research and Technique
Volume20
Issue number4
DOIs
StatePublished - 1992

Fingerprint

Electron microscopy
electron microscopy
Electron Microscopy
Oxygen
preparation
annealing
Electrons
crystals
Chemical polishing
Annealing
oxygen
Crystals
Reflection high energy electron diffraction
polishing
high energy electrons
Topography
Diffraction patterns
topography
diffraction patterns
electron diffraction

Keywords

  • Chemical polishing
  • Reflection high energy electron diffraction
  • Surface topography

ASJC Scopus subject areas

  • Agricultural and Biological Sciences(all)
  • Anatomy
  • Instrumentation

Cite this

Preparation and characterization of MgO surfaces by reflection electron microscopy. / Crozier, Peter; Gajdardziska-Josifovska, M.; Cowley, J. M.

In: Microscopy Research and Technique, Vol. 20, No. 4, 1992, p. 426-438.

Research output: Contribution to journalArticle

Crozier, Peter ; Gajdardziska-Josifovska, M. ; Cowley, J. M. / Preparation and characterization of MgO surfaces by reflection electron microscopy. In: Microscopy Research and Technique. 1992 ; Vol. 20, No. 4. pp. 426-438.
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