Preparation and characterization of atomically clean, stoichiometric surfaces of n- and p-type GaN(0001)

K. M. Tracy, W. J. Mecouch, R. F. Davis, R. J. Nemanich

Research output: Contribution to journalArticlepeer-review

105 Scopus citations

Abstract

The preparation and characterization of atomically clean, stoichiometric surfaces of n- and p-type GaN(0001) were studied. The relevant electronic features were the position of the valence band maximum (VBM), the band bending, and the electron affinity. The surface microstructure was investigated through the use of in situ techniques such as low energy electron diffraction (LEED) or reflection high energy electron diffraction (RHEED).

Original languageEnglish (US)
Pages (from-to)3163-3172
Number of pages10
JournalJournal of Applied Physics
Volume94
Issue number5
DOIs
StatePublished - Sep 1 2003
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint

Dive into the research topics of 'Preparation and characterization of atomically clean, stoichiometric surfaces of n- and p-type GaN(0001)'. Together they form a unique fingerprint.

Cite this