The preparation and characterization of atomically clean, stoichiometric surfaces of n- and p-type GaN(0001) were studied. The relevant electronic features were the position of the valence band maximum (VBM), the band bending, and the electron affinity. The surface microstructure was investigated through the use of in situ techniques such as low energy electron diffraction (LEED) or reflection high energy electron diffraction (RHEED).
ASJC Scopus subject areas
- Physics and Astronomy(all)