The initial stages of the reaction of Co with Si0.79Ge0.21(100) were studied in situ with extended x-ray absorption fine structure spectroscopy and reflection high energy electron diffraction. The Si:Ge ratio in the first coordination shell of Co in sub-monolayer Co films was found to increase with film thickness and annealing temperature, indicating preferential formation of Co-Si bonds. The impact of the observed preference for Co-Si bonding on the morphology of epitaxial CoSi2/S1-xGex heterostructures is discussed.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)