Preferential Co-Si bonding at the Co/SiGe(100) interface

B. I. Boyanov, P. T. Goeller, D. E. Sayers, Robert Nemanich

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The initial stages of the reaction of Co with Si0.79Ge0.21(100) were studied in situ with extended x-ray absorption fine structure spectroscopy and reflection high energy electron diffraction. The Si:Ge ratio in the first coordination shell of Co in sub-monolayer Co films was found to increase with film thickness and annealing temperature, indicating preferential formation of Co-Si bonds. The impact of the observed preference for Co-Si bonding on the morphology of epitaxial CoSi2/S1-xGex heterostructures is discussed.

Original languageEnglish (US)
Pages (from-to)3060-3062
Number of pages3
JournalApplied Physics Letters
Volume71
Issue number21
StatePublished - Nov 24 1997
Externally publishedYes

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x ray absorption
high energy electrons
film thickness
electron diffraction
fine structure
annealing
spectroscopy
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Boyanov, B. I., Goeller, P. T., Sayers, D. E., & Nemanich, R. (1997). Preferential Co-Si bonding at the Co/SiGe(100) interface. Applied Physics Letters, 71(21), 3060-3062.

Preferential Co-Si bonding at the Co/SiGe(100) interface. / Boyanov, B. I.; Goeller, P. T.; Sayers, D. E.; Nemanich, Robert.

In: Applied Physics Letters, Vol. 71, No. 21, 24.11.1997, p. 3060-3062.

Research output: Contribution to journalArticle

Boyanov, BI, Goeller, PT, Sayers, DE & Nemanich, R 1997, 'Preferential Co-Si bonding at the Co/SiGe(100) interface', Applied Physics Letters, vol. 71, no. 21, pp. 3060-3062.
Boyanov BI, Goeller PT, Sayers DE, Nemanich R. Preferential Co-Si bonding at the Co/SiGe(100) interface. Applied Physics Letters. 1997 Nov 24;71(21):3060-3062.
Boyanov, B. I. ; Goeller, P. T. ; Sayers, D. E. ; Nemanich, Robert. / Preferential Co-Si bonding at the Co/SiGe(100) interface. In: Applied Physics Letters. 1997 ; Vol. 71, No. 21. pp. 3060-3062.
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