Original language | English (US) |
---|---|
Pages (from-to) | vii-viii |
Journal | Ultramicroscopy |
Volume | 18 |
Issue number | 1-4 |
DOIs | |
State | Published - 1985 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Instrumentation
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In: Ultramicroscopy, Vol. 18, No. 1-4, 1985, p. vii-viii.
Research output: Contribution to journal › Editorial › peer-review
}
TY - JOUR
T1 - Preface
AU - Buseck, P R
N1 - Funding Information: beam-tilt alignment for achieving highest resolutions was emphasized and illustrated in separate talks by L.A. Bursill, P.G. Self and D.J. Smith. As magnifications and resolutions increase, careful control of such parameters will become of ever greater importance. The theoretical basis for much imaging was discussed by J. Gjonnes. Defects and lattice mismatches at grain boundaries received careful attention. Such interfaces are of special significance for electronic devices, and many fine examples were provided of interfaces in semiconductor materials. Details of boundaries between crystalline and amorphous layers as well as between two crystalline layers were revealed in high-resolution images by S.H. Chan and colleagues, R. Gronsky, A.H. Heuer, J.L. Hutchison, O.L. Krivanek and colleagues, and R. Sinclair. In either circumstance, it is now possible to observe the interfaces on almost the atomic scale. Surface features of Si were imaged by reflection electron microscopy by K. Yagi and colleagues, and equally remarkable detail was provided by edge-on images (in transmission mode) reviewed by L.D. Marks. J.A. Venables and colleagues showed the results of surface diffusion measurements on a variety of substrates. Important developments are also occurring in analytical electron microscopy, both in energy-dispersive, X-ray emission spectroscopy (EDS) and in electron energy-loss spectroscopy (EELS). Y. Bando combined high-resolution imaging on a 400 kV TEM with EDS and EELS analyses and obtained better results than with conventional TEMs. L.E. Thomas described the use of a dedicated STEM (100 kV) for similar sorts of measurements, again with superior results. Much attention was given to EELS analysis, both for improvements in resolution and for the analysis of details in spectra (P.E. Batson, C. Colliex, J.C.H. Spence, M.T. Ot-ten and colleagues). Complex structures were of special interest in the sessions on solid-state chemistry and mineralogy. B.G. Hyde illustrated a wide range of structures in simple oxides, silicates, and sulfides and discussed the chemical principles that relate the structures to general crystallographic principles. Polytypism in ceramics and mineral silicates was discussed by R.J. Angel, P.K. Davies and R.S. Roth, and J.J. Cooper and R.J.D. TiUey. Details of the decomposition of carbonate to simple oxides in the electron beam were provided by E.D. Cater and P.R. Buseck. Imaging of some complex silicates was illustrated by M. Mellini and B.K. Smith. Computer control of TEMs, as well as processing of experimental images, is proceeding apace with other developments. Some principles and examples were provided by W.O. Saxton and E.J. Kirkland and colleagues, and a most impressive example of what the future holds was provided by W. Krakow, who showed what an almost fully automated instrument can do with the aid of a mainframe computer (and an appropriately supportive employer). The Symposium was organized by a steering committee consisting of John Cowley, LeRoy Eyr-ing, and Peter Buseck (Chairman), with critical input and assistance at various stages by John Spence, the local arrangements organizer, and Ondrej Krivanek. Entertainment was organized by Alice Buseck and LaReal Eyring. Many graduate students, postdoctoral associates, and other colleagues provided invaluable help with transportation, audio-visual facilities, and many of the other functions that helped make the meeting run smoothly. Much of the day-to-day organization was ably handled by Nancy Higgins, Sharon Hol-loway, and Rhonda Kirkeide, with typing assistance by Jenny Needham. We also greatly appreciate the generosity of corporate sponsors, the National Science Foundation, and the Arizona State University Centennial Committee for providing the financial support that facilitated this assessment of the current state and future developments in high-resolution electron microscopy in its varied aspects. Funding Information: * The Facility is a national center supported by the National Facilities Program of the Division of Materials Research of the National Science Foundation. ** AMAX Foundation, Inc.; E.I. du Pont de Nemours & Company; Eastman Kodak Company; Exxon Research and Engineering Company; IBM Corporation; JEOL USA, Inc.; Monsanto Company; Motorola, Inc., Semiconductor Prod-ucts Sector; Shell Development Company; The Standard Oil Company of Ohio; Tektronix Foundation. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.
PY - 1985
Y1 - 1985
UR - http://www.scopus.com/inward/record.url?scp=46549101113&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=46549101113&partnerID=8YFLogxK
U2 - 10.1016/0304-3991(85)90115-9
DO - 10.1016/0304-3991(85)90115-9
M3 - Editorial
AN - SCOPUS:46549101113
SN - 0304-3991
VL - 18
SP - vii-viii
JO - Ultramicroscopy
JF - Ultramicroscopy
IS - 1-4
ER -