Abstract

In this work, a diffusion-reaction model was implemented and used to study Cu migration during the annealing process and stress test. Its impact on the metastable behavior of CdTe solar cells was also investigated. The preliminary results support our theoretical model presented here that explains rapid changes in atomic concentration of Cu in CdTe as a function of stress conditions.

Original languageEnglish (US)
Title of host publication2016 International Reliability Physics Symposium, IRPS 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages3C11-3C15
Volume2016-September
ISBN (Electronic)9781467391368
DOIs
StatePublished - Sep 22 2016
Event2016 International Reliability Physics Symposium, IRPS 2016 - Pasadena, United States
Duration: Apr 17 2016Apr 21 2016

Other

Other2016 International Reliability Physics Symposium, IRPS 2016
CountryUnited States
CityPasadena
Period4/17/164/21/16

Fingerprint

Solar cells
Defects
Annealing

Keywords

  • CdTe
  • Cu
  • numerical simulation
  • photovoltaic

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Guo, D., Akis, R., Brinkman, D., Vasileska, D., & Moore, A. (2016). Preditive simulation of defect migration and metastabilities in CdTe solar cells. In 2016 International Reliability Physics Symposium, IRPS 2016 (Vol. 2016-September, pp. 3C11-3C15). [7574522] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS.2016.7574522

Preditive simulation of defect migration and metastabilities in CdTe solar cells. / Guo, Da; Akis, Richard; Brinkman, Daniel; Vasileska, Dragica; Moore, Andrew.

2016 International Reliability Physics Symposium, IRPS 2016. Vol. 2016-September Institute of Electrical and Electronics Engineers Inc., 2016. p. 3C11-3C15 7574522.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Guo, D, Akis, R, Brinkman, D, Vasileska, D & Moore, A 2016, Preditive simulation of defect migration and metastabilities in CdTe solar cells. in 2016 International Reliability Physics Symposium, IRPS 2016. vol. 2016-September, 7574522, Institute of Electrical and Electronics Engineers Inc., pp. 3C11-3C15, 2016 International Reliability Physics Symposium, IRPS 2016, Pasadena, United States, 4/17/16. https://doi.org/10.1109/IRPS.2016.7574522
Guo D, Akis R, Brinkman D, Vasileska D, Moore A. Preditive simulation of defect migration and metastabilities in CdTe solar cells. In 2016 International Reliability Physics Symposium, IRPS 2016. Vol. 2016-September. Institute of Electrical and Electronics Engineers Inc. 2016. p. 3C11-3C15. 7574522 https://doi.org/10.1109/IRPS.2016.7574522
Guo, Da ; Akis, Richard ; Brinkman, Daniel ; Vasileska, Dragica ; Moore, Andrew. / Preditive simulation of defect migration and metastabilities in CdTe solar cells. 2016 International Reliability Physics Symposium, IRPS 2016. Vol. 2016-September Institute of Electrical and Electronics Engineers Inc., 2016. pp. 3C11-3C15
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