Abstract

In this work, a diffusion-reaction model was implemented and used to study Cu migration during the annealing process and stress test. Its impact on the metastable behavior of CdTe solar cells was also investigated. The preliminary results support our theoretical model presented here that explains rapid changes in atomic concentration of Cu in CdTe as a function of stress conditions.

Original languageEnglish (US)
Title of host publication2016 International Reliability Physics Symposium, IRPS 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages3C11-3C15
Volume2016-September
ISBN (Electronic)9781467391368
DOIs
StatePublished - Sep 22 2016
Event2016 International Reliability Physics Symposium, IRPS 2016 - Pasadena, United States
Duration: Apr 17 2016Apr 21 2016

Other

Other2016 International Reliability Physics Symposium, IRPS 2016
CountryUnited States
CityPasadena
Period4/17/164/21/16

Keywords

  • CdTe
  • Cu
  • numerical simulation
  • photovoltaic

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'Preditive simulation of defect migration and metastabilities in CdTe solar cells'. Together they form a unique fingerprint.

Cite this