Predictive modeling of the NBTI effect for reliable design

Sarvesh Bhardwaj, Wenping Wang, Rakesh Vattikonda, Yu Cao, Sarma Vrudhula

Research output: Chapter in Book/Report/Conference proceedingConference contribution

341 Scopus citations

Abstract

This paper presents a predictive model for the Negative Bias Temperature Instability (NBTI) of PMOS under both short term and long term operation. Based on the reaction-diffusion (R-D) mechanism, this model accurately captures the dependence of NBTI on the oxide thickness (tox), the diffusing species (H or H2) and other key transistor and design parameters. In addition, we derive a closed form expression for the threshold voltage change (ΔVth) under multiple cycle dynamic operation. Model accuracy and efficiency were verified with 90-nm experimental and simulation data. We further investigated the impact of NBTI on representative digital circuits.

Original languageEnglish (US)
Title of host publicationProceedings of the IEEE 2006 Custom Integrated Circuits Conference, CICC 2006
Pages189-192
Number of pages4
DOIs
StatePublished - 2006
EventIEEE 2006 Custom Integrated Circuits Conference, CICC 2006 - San Jose, CA, United States
Duration: Sep 10 2006Sep 13 2006

Publication series

NameProceedings of the Custom Integrated Circuits Conference
ISSN (Print)0886-5930

Other

OtherIEEE 2006 Custom Integrated Circuits Conference, CICC 2006
CountryUnited States
CitySan Jose, CA
Period9/10/069/13/06

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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