Predicting intrawafer film thickness uniformity in an ultralow pressure chemical vapor deposition reactor

Gregory Raupp, Dimitris A. Levedakis, Timothy S. Cale

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We present a reaction engineering analysis of a multiple wafer-in-tube ultrahigh vacuum chemical vapor deposition reactor which allows an estimate of wafer throughput for a reactor of fixed geometry and a given deposition chemistry with specified film thickness uniformity constraints. The model employs a description of ballistic transport and reaction based on the pseudosteady approximation to the Boltzmann equation in the limit of pure molecular flow. The model representation takes the form of an integral equation for the flux of each reactant or intermediate species to the wafer surfaces. Expressions for the reactive sticking coefficients (RSC) for each species must be incorporated in the term which represents reemission from a wafer surface. In our model we use a published expression for the RSC of silane as a function of flux and wafer temperature developed from molecular beam measurements. Numerical solution of the resulting integral equation using Gauss-Legendre quadrature yields quantitative estimates of intrawafer film thickness uniformities for epitaxial silicon deposition from silane for specified process conditions and wafer radius:wafer separation. For given reactor dimensions and specified uniformity, throughputs can then be estimated.

Original languageEnglish (US)
Pages (from-to)3053-3061
Number of pages9
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume11
Issue number6
DOIs
StatePublished - 1993

Fingerprint

Film thickness
Silanes
Chemical vapor deposition
film thickness
reactors
vapor deposition
wafers
Integral equations
Throughput
Fluxes
Molecular beams
Boltzmann equation
Ultrahigh vacuum
Silicon
Ballistics
silanes
integral equations
molecular flow
Geometry
coefficients

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Predicting intrawafer film thickness uniformity in an ultralow pressure chemical vapor deposition reactor. / Raupp, Gregory; Levedakis, Dimitris A.; Cale, Timothy S.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 11, No. 6, 1993, p. 3053-3061.

Research output: Contribution to journalArticle

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