### Abstract

We present a reaction engineering analysis of a multiple wafer-in-tube ultrahigh vacuum chemical vapor deposition reactor which allows an estimate of wafer throughput for a reactor of fixed geometry and a given deposition chemistry with specified film thickness uniformity constraints. The model employs a description of ballistic transport and reaction based on the pseudosteady approximation to the Boltzmann equation in the limit of pure molecular flow. The model representation takes the form of an integral equation for the flux of each reactant or intermediate species to the wafer surfaces. Expressions for the reactive sticking coefficients (RSC) for each species must be incorporated in the term which represents reemission from a wafer surface. In our model we use a published expression for the RSC of silane as a function of flux and wafer temperature developed from molecular beam measurements. Numerical solution of the resulting integral equation using Gauss-Legendre quadrature yields quantitative estimates of intrawafer film thickness uniformities for epitaxial silicon deposition from silane for specified process conditions and wafer radius:wafer separation. For given reactor dimensions and specified uniformity, throughputs can then be estimated.

Original language | English (US) |
---|---|

Pages (from-to) | 3053-3061 |

Number of pages | 9 |

Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |

Volume | 11 |

Issue number | 6 |

DOIs | |

State | Published - 1993 |

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### ASJC Scopus subject areas

- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films

### Cite this

*Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films*,

*11*(6), 3053-3061. https://doi.org/10.1116/1.578296

**Predicting intrawafer film thickness uniformity in an ultralow pressure chemical vapor deposition reactor.** / Raupp, Gregory; Levedakis, Dimitris A.; Cale, Timothy S.

Research output: Contribution to journal › Article

*Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films*, vol. 11, no. 6, pp. 3053-3061. https://doi.org/10.1116/1.578296

}

TY - JOUR

T1 - Predicting intrawafer film thickness uniformity in an ultralow pressure chemical vapor deposition reactor

AU - Raupp, Gregory

AU - Levedakis, Dimitris A.

AU - Cale, Timothy S.

PY - 1993

Y1 - 1993

N2 - We present a reaction engineering analysis of a multiple wafer-in-tube ultrahigh vacuum chemical vapor deposition reactor which allows an estimate of wafer throughput for a reactor of fixed geometry and a given deposition chemistry with specified film thickness uniformity constraints. The model employs a description of ballistic transport and reaction based on the pseudosteady approximation to the Boltzmann equation in the limit of pure molecular flow. The model representation takes the form of an integral equation for the flux of each reactant or intermediate species to the wafer surfaces. Expressions for the reactive sticking coefficients (RSC) for each species must be incorporated in the term which represents reemission from a wafer surface. In our model we use a published expression for the RSC of silane as a function of flux and wafer temperature developed from molecular beam measurements. Numerical solution of the resulting integral equation using Gauss-Legendre quadrature yields quantitative estimates of intrawafer film thickness uniformities for epitaxial silicon deposition from silane for specified process conditions and wafer radius:wafer separation. For given reactor dimensions and specified uniformity, throughputs can then be estimated.

AB - We present a reaction engineering analysis of a multiple wafer-in-tube ultrahigh vacuum chemical vapor deposition reactor which allows an estimate of wafer throughput for a reactor of fixed geometry and a given deposition chemistry with specified film thickness uniformity constraints. The model employs a description of ballistic transport and reaction based on the pseudosteady approximation to the Boltzmann equation in the limit of pure molecular flow. The model representation takes the form of an integral equation for the flux of each reactant or intermediate species to the wafer surfaces. Expressions for the reactive sticking coefficients (RSC) for each species must be incorporated in the term which represents reemission from a wafer surface. In our model we use a published expression for the RSC of silane as a function of flux and wafer temperature developed from molecular beam measurements. Numerical solution of the resulting integral equation using Gauss-Legendre quadrature yields quantitative estimates of intrawafer film thickness uniformities for epitaxial silicon deposition from silane for specified process conditions and wafer radius:wafer separation. For given reactor dimensions and specified uniformity, throughputs can then be estimated.

UR - http://www.scopus.com/inward/record.url?scp=21344487348&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21344487348&partnerID=8YFLogxK

U2 - 10.1116/1.578296

DO - 10.1116/1.578296

M3 - Article

AN - SCOPUS:21344487348

VL - 11

SP - 3053

EP - 3061

JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

SN - 0734-2101

IS - 6

ER -