Precursors for PbTe, PbSe, SnTe, and SnSe synthesized using diphenyl dichalcogenides

Zhongyong Wang, Yuanyu Ma, Prathamesh B. Vartak, Robert Wang

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We create precursors for PbTe, PbSe, SnTe, and SnSe by reacting Pb or Sn with diphenyl dichalcogenides in a variety of different solvents. We then deposit PbSexTe1-x thin films using these precursors and measure their thermoelectric properties. Introducing Na-dopants into the films allows the thermoelectric properties to be varied.

Original languageEnglish (US)
Pages (from-to)9055-9058
Number of pages4
JournalChemical Communications
Volume54
Issue number65
DOIs
StatePublished - Jan 1 2018

Fingerprint

Deposits
Doping (additives)
Thin films
diphenyl
lead selenide

ASJC Scopus subject areas

  • Catalysis
  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Chemistry(all)
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Precursors for PbTe, PbSe, SnTe, and SnSe synthesized using diphenyl dichalcogenides. / Wang, Zhongyong; Ma, Yuanyu; Vartak, Prathamesh B.; Wang, Robert.

In: Chemical Communications, Vol. 54, No. 65, 01.01.2018, p. 9055-9058.

Research output: Contribution to journalArticle

Wang, Zhongyong ; Ma, Yuanyu ; Vartak, Prathamesh B. ; Wang, Robert. / Precursors for PbTe, PbSe, SnTe, and SnSe synthesized using diphenyl dichalcogenides. In: Chemical Communications. 2018 ; Vol. 54, No. 65. pp. 9055-9058.
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