Abstract
As device engineers are turning to material scientists to provide new materials for enhanced functionality of device platforms, the materials scientists are turning to chemists to provide new chemistries to realize novel functionality within the epitaxial deposition process. Several non-traditional chemical precursors for silicon, carbon-doped Si (Si:C) and germanium deposition are presented that enable the drive to lower thermal budgets for integration within CMOS and DRAM platforms, among other benefits.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 12-15 |
| Number of pages | 4 |
| Journal | Solid State Technology |
| Volume | 52 |
| Issue number | 4 |
| State | Published - Apr 2009 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
- Materials Chemistry