Precursors for group IV epitaxy for micro/opto-electronic applications

Shawn G. Thomas, Matthias Bauer, Matthew Stephens, John Kouvetakis

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

As device engineers are turning to material scientists to provide new materials for enhanced functionality of device platforms, the materials scientists are turning to chemists to provide new chemistries to realize novel functionality within the epitaxial deposition process. Several non-traditional chemical precursors for silicon, carbon-doped Si (Si:C) and germanium deposition are presented that enable the drive to lower thermal budgets for integration within CMOS and DRAM platforms, among other benefits.

Original languageEnglish (US)
Pages (from-to)12-15
Number of pages4
JournalSolid State Technology
Volume52
Issue number4
StatePublished - Apr 2009

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

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