Precision of noninvasive temperature measurement by diffuse reflectance spectroscopy

T. P. Pearsall; Stevan R. Saban; James Booth; Barrett T. Beard; S. R. Johnson

doi:10.1063/1.1146184

Precision of noninvasive temperature measurement by diffuse reflectance spectroscopy

T. P. Pearsall, Stevan R. Saban, James Booth, Barrett T. Beard, S. R. Johnson

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

Diffuse reflectance spectroscopy can be used as a noninvasive probe for measurement of temperature in real time. We have measured the precision of this technique to determine the temperature of Si and GaAs substrates during semiconductor processing. Our results show that the standard deviation of the noninvasive optical technique is less than 1.5deg;C for GaAs and less than 2.0°C for Si over the temperature range 25°C<T<600°C. This standard deviation compares favorably to that for a type-K thermocouple used in the same measurements: s.d.<1.5°C. These results support the notion that noninvasive optical temperature measurement can be used in semiconductor processing with a precision approaching that of a thermocouple.

Original language	English (US)
Pages (from-to)	4977-4980
Number of pages	4
Journal	Review of Scientific Instruments
Volume	66
Issue number	10
DOIs	https://doi.org/10.1063/1.1146184
State	Published - 1995
Externally published	Yes

ASJC Scopus subject areas

Instrumentation

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title = "Precision of noninvasive temperature measurement by diffuse reflectance spectroscopy",

abstract = "Diffuse reflectance spectroscopy can be used as a noninvasive probe for measurement of temperature in real time. We have measured the precision of this technique to determine the temperature of Si and GaAs substrates during semiconductor processing. Our results show that the standard deviation of the noninvasive optical technique is less than 1.5deg;C for GaAs and less than 2.0°C for Si over the temperature range 25°C<T<600°C. This standard deviation compares favorably to that for a type-K thermocouple used in the same measurements: s.d.<1.5°C. These results support the notion that noninvasive optical temperature measurement can be used in semiconductor processing with a precision approaching that of a thermocouple.",

author = "Pearsall, {T. P.} and Saban, {Stevan R.} and James Booth and Beard, {Barrett T.} and Johnson, {S. R.}",

year = "1995",

doi = "10.1063/1.1146184",

language = "English (US)",

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journal = "Review of Scientific Instruments",

issn = "0034-6748",

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T1 - Precision of noninvasive temperature measurement by diffuse reflectance spectroscopy

AU - Pearsall, T. P.

AU - Saban, Stevan R.

AU - Booth, James

AU - Beard, Barrett T.

AU - Johnson, S. R.

PY - 1995

Y1 - 1995

N2 - Diffuse reflectance spectroscopy can be used as a noninvasive probe for measurement of temperature in real time. We have measured the precision of this technique to determine the temperature of Si and GaAs substrates during semiconductor processing. Our results show that the standard deviation of the noninvasive optical technique is less than 1.5deg;C for GaAs and less than 2.0°C for Si over the temperature range 25°C<T<600°C. This standard deviation compares favorably to that for a type-K thermocouple used in the same measurements: s.d.<1.5°C. These results support the notion that noninvasive optical temperature measurement can be used in semiconductor processing with a precision approaching that of a thermocouple.

AB - Diffuse reflectance spectroscopy can be used as a noninvasive probe for measurement of temperature in real time. We have measured the precision of this technique to determine the temperature of Si and GaAs substrates during semiconductor processing. Our results show that the standard deviation of the noninvasive optical technique is less than 1.5deg;C for GaAs and less than 2.0°C for Si over the temperature range 25°C<T<600°C. This standard deviation compares favorably to that for a type-K thermocouple used in the same measurements: s.d.<1.5°C. These results support the notion that noninvasive optical temperature measurement can be used in semiconductor processing with a precision approaching that of a thermocouple.

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Precision of noninvasive temperature measurement by diffuse reflectance spectroscopy

Abstract

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