Precision of noninvasive temperature measurement by diffuse reflectance spectroscopy

T. P. Pearsall, Stevan R. Saban, James Booth, Barrett T. Beard, S. R. Johnson

Research output: Contribution to journalArticle

24 Scopus citations

Abstract

Diffuse reflectance spectroscopy can be used as a noninvasive probe for measurement of temperature in real time. We have measured the precision of this technique to determine the temperature of Si and GaAs substrates during semiconductor processing. Our results show that the standard deviation of the noninvasive optical technique is less than 1.5deg;C for GaAs and less than 2.0°C for Si over the temperature range 25°C<T<600°C. This standard deviation compares favorably to that for a type-K thermocouple used in the same measurements: s.d.<1.5°C. These results support the notion that noninvasive optical temperature measurement can be used in semiconductor processing with a precision approaching that of a thermocouple.

Original languageEnglish (US)
Pages (from-to)4977-4980
Number of pages4
JournalReview of Scientific Instruments
Volume66
Issue number10
DOIs
StatePublished - Dec 1 1995
Externally publishedYes

ASJC Scopus subject areas

  • Instrumentation

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