Precision of non-invasive temperature measurement by diffuse reflectance spectroscopy

Zhongze Wang, Siu L. Kwan, T. P. Pearsall, James Booth, Barrett T. Beard, Shane Johnson

Research output: Contribution to journalConference article

Abstract

We demonstrate the use of diffuse reflectance spectroscopy as a non-invasive probe for measurement of temperature in real time on Si and GaAs substrates during semiconductor processing. Our results show that the standard deviation of the non-invasive optical technique is less than 0.7 °C for GaAs over the temperature range 50 °C < T < 600 °C with 5-second updates. These results support the notion that non-invasive optical temperature measurement can be used in semiconductor processing with a precision exceeding that of a thermocouple.

Original languageEnglish (US)
Pages (from-to)69-74
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume406
StatePublished - Jan 1 1996
Externally publishedYes
EventProceedings of the 1995 MRS Fall Symposium - Boston, MA, USA
Duration: Nov 27 1995Nov 30 1995

Fingerprint

Temperature measurement
temperature measurement
Spectroscopy
Semiconductor materials
reflectance
thermocouples
Processing
Thermocouples
spectroscopy
standard deviation
Temperature
temperature
probes
Substrates
gallium arsenide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Precision of non-invasive temperature measurement by diffuse reflectance spectroscopy. / Wang, Zhongze; Kwan, Siu L.; Pearsall, T. P.; Booth, James; Beard, Barrett T.; Johnson, Shane.

In: Materials Research Society Symposium - Proceedings, Vol. 406, 01.01.1996, p. 69-74.

Research output: Contribution to journalConference article

Wang, Zhongze ; Kwan, Siu L. ; Pearsall, T. P. ; Booth, James ; Beard, Barrett T. ; Johnson, Shane. / Precision of non-invasive temperature measurement by diffuse reflectance spectroscopy. In: Materials Research Society Symposium - Proceedings. 1996 ; Vol. 406. pp. 69-74.
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