Precision of non-invasive temperature measurement by diffuse reflectance spectroscopy

Zhongze Wang, Siu L. Kwan, T. P. Pearsall, James Booth, Barrett T. Beard, Shane R. Johnson

Research output: Contribution to journalConference article

Abstract

We demonstrate the use of diffuse reflectance spectroscopy as a non-invasive probe for measurement of temperature in real time on Si and GaAs substrates during semiconductor processing. Our results show that the standard deviation of the non-invasive optical technique is less than 0.7 °C for GaAs over the temperature range 50 °C < T < 600 °C with 5-second updates. These results support the notion that non-invasive optical temperature measurement can be used in semiconductor processing with a precision exceeding that of a thermocouple.

Original languageEnglish (US)
Pages (from-to)69-74
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume406
StatePublished - Jan 1 1996
Externally publishedYes
EventProceedings of the 1995 MRS Fall Symposium - Boston, MA, USA
Duration: Nov 27 1995Nov 30 1995

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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