Abstract

Graphene grown using cold-wall chemical vapor deposition on Cu surfaces follows a classical nucleation and growth mechanism. Following nucleation at the earliest growth stages, isolated crystallites grow, impinge, and coalesce to form a continuous layer. During the pre-coalescence growth regime, the size distributions of graphene crystallites exhibit scaling of the form N(s) = θ/«s»2 g(s/«s»), where s is the island area, θ is the graphene coverage, «s» is the average island area, N is the areal density, and g(x) is a scaling function. For graphene grown on Cu surfaces that have been annealed in a reducing Ar + H2 ambient, excellent data collapse onto a universal Avrami scaling function is observed irrespective of graphene coverage, surface roughness, or Cu grain size. This result is interpreted to indicate attachment-limited growth and desorption of diffusing C-containing species. Graphene grown on Cu surfaces that were annealed in a non-reducing environment exhibits a qualitatively different scaling function, indicating diffusion-limited growth with a lower attachment barrier combined with C detachment from the graphene edges.

Original languageEnglish (US)
Article number205306
JournalJournal of Applied Physics
Volume123
Issue number20
DOIs
StatePublished - May 28 2018

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coalescing
graphene
scaling
crystallites
attachment
nucleation
cold walls
detachment
surface roughness
grain size
desorption
vapor deposition

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Pre-coalescence scaling of graphene island sizes. / Das, Shantanu; Drucker, Jeffery.

In: Journal of Applied Physics, Vol. 123, No. 20, 205306, 28.05.2018.

Research output: Contribution to journalArticle

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