Practical strategies for tuning optical, structural and thermal properties in group IV ternary semiconductors

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Recently synthesized SiGeSn ternary alloys offer the possibility of varying their composition and thus their optical behavior while maintaining the lattice parameter at a constant value. In this paper we use theoretical calculations to show that the bandgap of Ge1-X (Si0.8Sn 0.2)X derivatives can be varied from 0.8 to 1.1 eV (X = 0-0.5) at a fixed lattice constant identical to Ge. We also show that Sn clustering in the diamond cubic structure can alter both the magnitude and character (direct/indirect) of the bandgap in these systems, particularly at high Sn concentrations. First principles thermochemistry simulations were finally used to calculate the Gibbs free energy and demonstrate that the mixing entropy is responsible for the stabilization of the ternary alloys with respect to GeSn binaries of the same Sn content consistent with experimental observations.

Original languageEnglish (US)
Title of host publicationSiGe, Ge, and Related Compounds 4
Subtitle of host publicationMaterials, Processing, and Devices
Pages717-728
Number of pages12
Edition6
DOIs
StatePublished - Dec 1 2010
Event4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting - Las Vegas, NV, United States
Duration: Oct 10 2010Oct 15 2010

Publication series

NameECS Transactions
Number6
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period10/10/1010/15/10

ASJC Scopus subject areas

  • Engineering(all)

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    Chizmeshya, A., & Kouvetakis, J. (2010). Practical strategies for tuning optical, structural and thermal properties in group IV ternary semiconductors. In SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices (6 ed., pp. 717-728). (ECS Transactions; Vol. 33, No. 6). https://doi.org/10.1149/1.3487602