Practical B and P doping via Six Sny Ge1-x-y-z Mz quaternaries lattice matched to Ge: Structural, electrical, and strain behavior

Y. Y. Fang, J. Tolle, Andrew Chizmeshya, John Kouvetakis, V. R. D'Costa, Jose Menendez

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We describe the fabrication of B and P doped SiGeSn ternaries, lattice-matched to Ge, with compositions adjusted to independently tune the band gap. These are deposited at 320-350 °C with superior crystallinity and morphology via in situ reactions of diborane (p -type) and designer P (SiH 3) 3 and P (GeH3) 3 precursors (n -type). Device-level carrier concentrations in the 1019 - 1020 / cm3 range are produced yielding film resistivities and carrier mobilities comparable to those of Ge indicating negligible alloy scattering. High boron levels induce a significant and systematic contraction of the host lattice, which is compensated by an adjustment of the Sn/Si ratio in accord with a simple model based on Vegard's law, the mismatch of covalent radii of the constituents, and the absolute hydrostatic deformation potentials for the band edges.

Original languageEnglish (US)
Article number081113
JournalApplied Physics Letters
Issue number8
StatePublished - Sep 7 2009


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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