Postmetallization annealing (PMA) is widely used to reduce midgap interface trap densities in aluminum gate MOS structures. It is shown that the presence of 1% silicon in the aluminum inhibits PMA and that increased PMA times result in an increase rather than a decrease in midgap interface trap densities for AlSi.
|Original language||English (US)|
|Number of pages||2|
|Publication status||Published - Jan 1 1985|
ASJC Scopus subject areas
- Electrical and Electronic Engineering