POSTMETALLISATION ANNEALING OF ALUMINIUM-SILICON GATE MOS CAPACITORS.

I. McGillivray, J. M. Robertson, A. J. Walton

Research output: Contribution to journalArticle

Abstract

Postmetallization annealing (PMA) is widely used to reduce midgap interface trap densities in aluminum gate MOS structures. It is shown that the presence of 1% silicon in the aluminum inhibits PMA and that increased PMA times result in an increase rather than a decrease in midgap interface trap densities for AlSi.

Original languageEnglish (US)
Pages (from-to)973-974
Number of pages2
JournalElectronics Letters
Volume21
Issue number21
Publication statusPublished - Jan 1 1985
Externally publishedYes

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

McGillivray, I., Robertson, J. M., & Walton, A. J. (1985). POSTMETALLISATION ANNEALING OF ALUMINIUM-SILICON GATE MOS CAPACITORS. Electronics Letters, 21(21), 973-974.