Postmetallisation Annealing Of Aluminium-Silicon Gate Mos Capacitors

I. Mcgillivray; J. M. Robertson; A. J. Walton

doi:10.1049/el:19850689

Postmetallisation Annealing Of Aluminium-Silicon Gate Mos Capacitors

I. Mcgillivray, J. M. Robertson, A. J. Walton

Research output: Contribution to journal › Article › peer-review

Abstract

Postmetallisation annealing (PMA) is widely used to reduce midgap interface trap densities in aluminium gate MOS structures. It is shown that the presence of 1% silicon in the aluminium inhibits PMA and that increased PMA times result in an increase rather than a decrease in midgap interface trap densities for AlSi.

Original language	English (US)
Pages (from-to)	973-974
Number of pages	2
Journal	Electronics Letters
Volume	21
Issue number	21
DOIs	https://doi.org/10.1049/el:19850689
State	Published - 1985
Externally published	Yes

Keywords

Annealing
Metal-oxide-semiconductor structures and devices
Semiconductor devices and materials

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19850689

Cite this

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title = "Postmetallisation Annealing Of Aluminium-Silicon Gate Mos Capacitors",

abstract = "Postmetallisation annealing (PMA) is widely used to reduce midgap interface trap densities in aluminium gate MOS structures. It is shown that the presence of 1% silicon in the aluminium inhibits PMA and that increased PMA times result in an increase rather than a decrease in midgap interface trap densities for AlSi.",

keywords = "Annealing, Metal-oxide-semiconductor structures and devices, Semiconductor devices and materials",

author = "I. Mcgillivray and Robertson, {J. M.} and Walton, {A. J.}",

year = "1985",

doi = "10.1049/el:19850689",

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journal = "Electronics Letters",

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AU - Robertson, J. M.

AU - Walton, A. J.

PY - 1985

Y1 - 1985

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AB - Postmetallisation annealing (PMA) is widely used to reduce midgap interface trap densities in aluminium gate MOS structures. It is shown that the presence of 1% silicon in the aluminium inhibits PMA and that increased PMA times result in an increase rather than a decrease in midgap interface trap densities for AlSi.

KW - Annealing

KW - Metal-oxide-semiconductor structures and devices

KW - Semiconductor devices and materials

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Postmetallisation Annealing Of Aluminium-Silicon Gate Mos Capacitors

Abstract

Keywords

ASJC Scopus subject areas

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