Postmetallisation Annealing Of Aluminium-Silicon Gate Mos Capacitors

I. Mcgillivray, J. M. Robertson, A. J. Walton

Research output: Contribution to journalArticlepeer-review

Abstract

Postmetallisation annealing (PMA) is widely used to reduce midgap interface trap densities in aluminium gate MOS structures. It is shown that the presence of 1% silicon in the aluminium inhibits PMA and that increased PMA times result in an increase rather than a decrease in midgap interface trap densities for AlSi.

Original languageEnglish (US)
Pages (from-to)973-974
Number of pages2
JournalElectronics Letters
Volume21
Issue number21
DOIs
StatePublished - Jan 1 1985

Keywords

  • Annealing
  • Metal-oxide-semiconductor structures and devices
  • Semiconductor devices and materials

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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