Postmetallisation annealing (PMA) is widely used to reduce midgap interface trap densities in aluminium gate MOS structures. It is shown that the presence of 1% silicon in the aluminium inhibits PMA and that increased PMA times result in an increase rather than a decrease in midgap interface trap densities for AlSi.
|Original language||English (US)|
|Number of pages||2|
|State||Published - 1985|
- Metal-oxide-semiconductor structures and devices
- Semiconductor devices and materials
ASJC Scopus subject areas
- Electrical and Electronic Engineering