Post-irradiation-gate-stress on power MOSFETs: Quantification of latent defects-induced reliability degradation

A. Privat, A. D. Touboul, A. Michez, S. Bourdarie, J. R. Vaille, F. Wrobel, R. Arinero, N. Chatry, G. Chaumont, E. Lorfevre, F. Saigne

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

Electrical characterizations are used to understand power MOSFETs failure mechanisms after heavy ion irradiation. Results indicate that both bias levels and impact localization of heavy ion are important parameters for SEGR triggering or latent defect formation. This work addresses the limits of the post-irradiation gate stress relevance used for Power MOSFETs space qualification.

Original languageEnglish (US)
Article number6678308
Pages (from-to)4166-4174
Number of pages9
JournalIEEE Transactions on Nuclear Science
Volume60
Issue number6
DOIs
StatePublished - Dec 2013
Externally publishedYes

Keywords

  • Heavy ion
  • latent defect
  • post-irradiation-gate-stress
  • power MOSFET
  • reliability
  • SEGR

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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