Post-irradiation annealing mechanisms of defects generated in hydrogenated bipolar oxides

X. Jie Chen, Hugh Barnaby, Bert Vermeire, Keith Holbert, David Wright, Ronald L. Pease, Ronald D. Schrimpf, Daniel M. Fleetwood, Sokrates T. Pantelides, Marty R. Shaneyfelt, Philippe Adell

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

Bipolar test structures were irradiated and annealed with various combinations of molecular hydrogen gas ambients, bias, and thermal conditions. The results show that the buildup and annealing behavior of defects in bipolar base oxides depend strongly on hydrogen concentration. Differences observed in trapped oxide charge annealing rates suggest that the charged defects created in hydrogen-rich environments may be attributed to different types of positive charge in addition to trapped holes.

Original languageEnglish (US)
Article number4723811
Pages (from-to)3032-3038
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume55
Issue number6
DOIs
Publication statusPublished - Dec 2008

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Keywords

  • Bipolar oxide
  • Gated bipolar devices
  • Hydrogen
  • Interface traps
  • Oxide trapped charge
  • Radiation-induced

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering
  • Nuclear and High Energy Physics

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