Population relaxation time of nonequilibrium LO phonons and electron-phonon interactions in GaAs-AlxGa1-xAs multiple-quantum-well structures

Kong-Thon Tsen, H. Morkoç

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The population relaxation time of nonequilibrium LO phonons with wave vectors perpendicular to the layers of GaAs-AlxGa1-xAs multiple-quantum-well structures is measured by time-resolved Raman scattering on a picosecond time scale. The experimental results have revealed the generation as well as decay of these excitations, and 6 ps is deduced for their relaxation time at T80 K. From the estimated rise time of the anti-Stokes signal, an upper limit (-0.8 ps) for the average electron-phonon scattering time for electrons occupying the continuum states is determined.

Original languageEnglish (US)
Pages (from-to)4412-4414
Number of pages3
JournalPhysical Review B
Issue number6
StatePublished - Jan 1 1986


ASJC Scopus subject areas

  • Condensed Matter Physics

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