Polarization field mapping of AlGaN/GaN HEMT devices using lorentz-mode electron holography

David A. Cullen; David Smith; Peter L. Fejes; Martha McCartney

doi:10.1017/S1431927609097098

Polarization field mapping of AlGaN/GaN HEMT devices using lorentz-mode electron holography

David A. Cullen, David Smith, Peter L. Fejes, Martha McCartney

Research output: Contribution to journal › Article › peer-review

Original language	English (US)
Pages (from-to)	1236-1237
Number of pages	2
Journal	Microscopy and Microanalysis
Volume	15
Issue number	SUPPL. 2
DOIs	https://doi.org/10.1017/S1431927609097098
State	Published - Jul 2009

ASJC Scopus subject areas

Instrumentation

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10.1017/S1431927609097098

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title = "Polarization field mapping of AlGaN/GaN HEMT devices using lorentz-mode electron holography",

author = "Cullen, {David A.} and David Smith and Fejes, {Peter L.} and Martha McCartney",

note = "Funding Information: [1] O. Ambacher et al., J. Appl. Phys. 85 (1999) 3222-3233. [2] U.K. Mishra et al., Proc. IEEE 96 (2008) 287-305. [3] M.R. McCartney et al., J. Appl. Phys. 82 (1997) 2461-2465. [4] This work was supported by a contract from Wright-Patterson Air Force Base (Monitor: C.",

year = "2009",

month = jul,

doi = "10.1017/S1431927609097098",

language = "English (US)",

volume = "15",

pages = "1236--1237",

journal = "Microscopy and Microanalysis",

issn = "1431-9276",

publisher = "Cambridge University Press",

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T1 - Polarization field mapping of AlGaN/GaN HEMT devices using lorentz-mode electron holography

AU - Cullen, David A.

AU - Smith, David

AU - Fejes, Peter L.

AU - McCartney, Martha

N1 - Funding Information: [1] O. Ambacher et al., J. Appl. Phys. 85 (1999) 3222-3233. [2] U.K. Mishra et al., Proc. IEEE 96 (2008) 287-305. [3] M.R. McCartney et al., J. Appl. Phys. 82 (1997) 2461-2465. [4] This work was supported by a contract from Wright-Patterson Air Force Base (Monitor: C.

PY - 2009/7

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JO - Microscopy and Microanalysis

JF - Microscopy and Microanalysis

IS - SUPPL. 2

ER -

Polarization field mapping of AlGaN/GaN HEMT devices using lorentz-mode electron holography

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