Polarization field mapping of Al0.85 In0.15 N/AlN/GaN heterostructure

Lin Zhou; David A. Cullen; David Smith; Martha McCartney; Anas Mouti; M. Gonschorek; E. Feltin; J. F. Carlin; N. Grandjean

doi:10.1063/1.3108084

Polarization field mapping of Al0.85 In0.15 N/AlN/GaN heterostructure

Lin Zhou, David A. Cullen, David Smith, Martha McCartney, Anas Mouti, M. Gonschorek, E. Feltin, J. F. Carlin, N. Grandjean

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Abstract

Off-axis electron holography has been used to measure the built-in potential profile across an Al0.85 In0.15 N/AlN/GaN high electron mobility transistor heterostructure. Profile measurements indicated a polarization-induced electric field of 6.9 MV/cm within the AlN layer. A two-dimensional electron gas with a density of ∼2.1× 1013 cm-2 was located in the GaN layer at ∼0.8 nm away from the AlN/GaN interface in reasonable agreement with the reported simulations. Electron microscopy confirmed that the Al0.85 In0.15 N layer was uniform and that Al0.85 In0.15 N/AlN and AlN/GaN interfaces were abrupt and well defined.

Original language	English (US)
Article number	121909
Journal	Applied Physics Letters
Volume	94
Issue number	12
DOIs	https://doi.org/10.1063/1.3108084
State	Published - 2009

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{929f6dc663a548309e9db2a495e0bdde,

title = "Polarization field mapping of Al0.85 In0.15 N/AlN/GaN heterostructure",

abstract = "Off-axis electron holography has been used to measure the built-in potential profile across an Al0.85 In0.15 N/AlN/GaN high electron mobility transistor heterostructure. Profile measurements indicated a polarization-induced electric field of 6.9 MV/cm within the AlN layer. A two-dimensional electron gas with a density of ∼2.1× 1013 cm-2 was located in the GaN layer at ∼0.8 nm away from the AlN/GaN interface in reasonable agreement with the reported simulations. Electron microscopy confirmed that the Al0.85 In0.15 N layer was uniform and that Al0.85 In0.15 N/AlN and AlN/GaN interfaces were abrupt and well defined.",

author = "Lin Zhou and Cullen, {David A.} and David Smith and Martha McCartney and Anas Mouti and M. Gonschorek and E. Feltin and Carlin, {J. F.} and N. Grandjean",

note = "Funding Information: This work was supported by a contract from Wright Patterson Air Force Base (Monitor: C. Bozada) and the Swiss National Science Foundation (Contract No. 200021-107642/1). We acknowledge the use of facilities at John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University.",

year = "2009",

doi = "10.1063/1.3108084",

language = "English (US)",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "12",

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TY - JOUR

T1 - Polarization field mapping of Al0.85 In0.15 N/AlN/GaN heterostructure

AU - Zhou, Lin

AU - Cullen, David A.

AU - Smith, David

AU - McCartney, Martha

AU - Mouti, Anas

AU - Gonschorek, M.

AU - Feltin, E.

AU - Carlin, J. F.

AU - Grandjean, N.

N1 - Funding Information: This work was supported by a contract from Wright Patterson Air Force Base (Monitor: C. Bozada) and the Swiss National Science Foundation (Contract No. 200021-107642/1). We acknowledge the use of facilities at John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University.

PY - 2009

Y1 - 2009

N2 - Off-axis electron holography has been used to measure the built-in potential profile across an Al0.85 In0.15 N/AlN/GaN high electron mobility transistor heterostructure. Profile measurements indicated a polarization-induced electric field of 6.9 MV/cm within the AlN layer. A two-dimensional electron gas with a density of ∼2.1× 1013 cm-2 was located in the GaN layer at ∼0.8 nm away from the AlN/GaN interface in reasonable agreement with the reported simulations. Electron microscopy confirmed that the Al0.85 In0.15 N layer was uniform and that Al0.85 In0.15 N/AlN and AlN/GaN interfaces were abrupt and well defined.

AB - Off-axis electron holography has been used to measure the built-in potential profile across an Al0.85 In0.15 N/AlN/GaN high electron mobility transistor heterostructure. Profile measurements indicated a polarization-induced electric field of 6.9 MV/cm within the AlN layer. A two-dimensional electron gas with a density of ∼2.1× 1013 cm-2 was located in the GaN layer at ∼0.8 nm away from the AlN/GaN interface in reasonable agreement with the reported simulations. Electron microscopy confirmed that the Al0.85 In0.15 N layer was uniform and that Al0.85 In0.15 N/AlN and AlN/GaN interfaces were abrupt and well defined.

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DO - 10.1063/1.3108084

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SN - 0003-6951

IS - 12

M1 - 121909

ER -

Polarization field mapping of Al0.85 In0.15 N/AlN/GaN heterostructure

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