Polarization field mapping of Al0.85 In0.15 N/AlN/GaN heterostructure

Lin Zhou, David A. Cullen, David Smith, Martha McCartney, Anas Mouti, M. Gonschorek, E. Feltin, J. F. Carlin, N. Grandjean

Research output: Contribution to journal › Article

23 Citations (Scopus)

Abstract

Off-axis electron holography has been used to measure the built-in potential profile across an Al0.85 In0.15 N/AlN/GaN high electron mobility transistor heterostructure. Profile measurements indicated a polarization-induced electric field of 6.9 MV/cm within the AlN layer. A two-dimensional electron gas with a density of ∼2.1× 1013 cm-2 was located in the GaN layer at ∼0.8 nm away from the AlN/GaN interface in reasonable agreement with the reported simulations. Electron microscopy confirmed that the Al0.85 In0.15 N layer was uniform and that Al0.85 In0.15 N/AlN and AlN/GaN interfaces were abrupt and well defined.

Original languageEnglish (US)
Article number121909
JournalApplied Physics Letters
Volume94
Issue number12
DOIs
StatePublished - 2009

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polarization
profiles
high electron mobility transistors
holography
electron gas
electron microscopy
electric fields
electrons
simulation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Zhou, L., Cullen, D. A., Smith, D., McCartney, M., Mouti, A., Gonschorek, M., ... Grandjean, N. (2009). Polarization field mapping of Al0.85 In0.15 N/AlN/GaN heterostructure. Applied Physics Letters, 94(12), [121909]. https://doi.org/10.1063/1.3108084

Polarization field mapping of Al0.85 In0.15 N/AlN/GaN heterostructure. / Zhou, Lin; Cullen, David A.; Smith, David; McCartney, Martha; Mouti, Anas; Gonschorek, M.; Feltin, E.; Carlin, J. F.; Grandjean, N.

In: Applied Physics Letters, Vol. 94, No. 12, 121909, 2009.

Research output: Contribution to journal › Article

Zhou, L, Cullen, DA, Smith, D, McCartney, M, Mouti, A, Gonschorek, M, Feltin, E, Carlin, JF & Grandjean, N 2009, 'Polarization field mapping of Al0.85 In0.15 N/AlN/GaN heterostructure', Applied Physics Letters, vol. 94, no. 12, 121909. https://doi.org/10.1063/1.3108084
Zhou L, Cullen DA, Smith D, McCartney M, Mouti A, Gonschorek M et al. Polarization field mapping of Al0.85 In0.15 N/AlN/GaN heterostructure. Applied Physics Letters. 2009;94(12). 121909. https://doi.org/10.1063/1.3108084
Zhou, Lin ; Cullen, David A. ; Smith, David ; McCartney, Martha ; Mouti, Anas ; Gonschorek, M. ; Feltin, E. ; Carlin, J. F. ; Grandjean, N. / Polarization field mapping of Al0.85 In0.15 N/AlN/GaN heterostructure. In: Applied Physics Letters. 2009 ; Vol. 94, No. 12.
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