Polarization field mapping of Al0.85 In0.15 N/AlN/GaN heterostructure

Lin Zhou, David A. Cullen, David Smith, Martha McCartney, Anas Mouti, M. Gonschorek, E. Feltin, J. F. Carlin, N. Grandjean

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Off-axis electron holography has been used to measure the built-in potential profile across an Al0.85 In0.15 N/AlN/GaN high electron mobility transistor heterostructure. Profile measurements indicated a polarization-induced electric field of 6.9 MV/cm within the AlN layer. A two-dimensional electron gas with a density of ∼2.1× 1013 cm-2 was located in the GaN layer at ∼0.8 nm away from the AlN/GaN interface in reasonable agreement with the reported simulations. Electron microscopy confirmed that the Al0.85 In0.15 N layer was uniform and that Al0.85 In0.15 N/AlN and AlN/GaN interfaces were abrupt and well defined.

Original languageEnglish (US)
Article number121909
JournalApplied Physics Letters
Issue number12
StatePublished - Apr 7 2009

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Zhou, L., Cullen, D. A., Smith, D., McCartney, M., Mouti, A., Gonschorek, M., Feltin, E., Carlin, J. F., & Grandjean, N. (2009). Polarization field mapping of Al0.85 In0.15 N/AlN/GaN heterostructure. Applied Physics Letters, 94(12), [121909]. https://doi.org/10.1063/1.3108084