Abstract
Off-axis electron holography has been used to measure the built-in potential profile across an Al0.85 In0.15 N/AlN/GaN high electron mobility transistor heterostructure. Profile measurements indicated a polarization-induced electric field of 6.9 MV/cm within the AlN layer. A two-dimensional electron gas with a density of ∼2.1× 1013 cm-2 was located in the GaN layer at ∼0.8 nm away from the AlN/GaN interface in reasonable agreement with the reported simulations. Electron microscopy confirmed that the Al0.85 In0.15 N layer was uniform and that Al0.85 In0.15 N/AlN and AlN/GaN interfaces were abrupt and well defined.
| Original language | English (US) |
|---|---|
| Article number | 121909 |
| Journal | Applied Physics Letters |
| Volume | 94 |
| Issue number | 12 |
| DOIs | |
| State | Published - Apr 7 2009 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Zhou, L., Cullen, D. A., Smith, D., McCartney, M., Mouti, A., Gonschorek, M., Feltin, E., Carlin, J. F., & Grandjean, N. (2009). Polarization field mapping of Al0.85 In0.15 N/AlN/GaN heterostructure. Applied Physics Letters, 94(12), [121909]. https://doi.org/10.1063/1.3108084