Abstract
The electrostatic potential profiles and charge distributions in modulation-doped n-type and p-type AlGaN/AlN/GaN hetero-structures have been measured by electron holography with high spatial resolution. For n-type two-dimensional electron gas structure a negative curvature and for p-type two-dimensional hole gas structure a positive curvature in the potential profile at the AlN/GaN interface were observed, which demonstrated the accumulation of two-dimensional carriers. The measured electrostatic potential profiles were also compared with the calculated band diagram in the heterostructures.
Original language | English (US) |
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Pages (from-to) | 1722-1724 |
Number of pages | 3 |
Journal | Physica Status Solidi (B) Basic Research |
Volume | 247 |
Issue number | 7 |
DOIs | |
State | Published - Jul 1 2010 |
Keywords
- AlGaN
- AlN
- Electron holography
- GaN
- Heterostructures
- Two-dimensional electron gas
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics