Polarization effects in 2-DEG and basic solid state physics 2-DHG AlGaN/AlN/GaN multi-heterostructures measured by electron holography

Q. Y. Wei, Z. H. Wu, Fernando Ponce, J. Hertkorn, F. Scholz

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

The electrostatic potential profiles and charge distributions in modulation-doped n-type and p-type AlGaN/AlN/GaN hetero-structures have been measured by electron holography with high spatial resolution. For n-type two-dimensional electron gas structure a negative curvature and for p-type two-dimensional hole gas structure a positive curvature in the potential profile at the AlN/GaN interface were observed, which demonstrated the accumulation of two-dimensional carriers. The measured electrostatic potential profiles were also compared with the calculated band diagram in the heterostructures.

Original languageEnglish (US)
Pages (from-to)1722-1724
Number of pages3
JournalPhysica Status Solidi (B) Basic Research
Volume247
Issue number7
DOIs
StatePublished - Jul 1 2010

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Keywords

  • AlGaN
  • AlN
  • Electron holography
  • GaN
  • Heterostructures
  • Two-dimensional electron gas

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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