Polarity determination by atomic location by channeling-enhanced microanalysis

N. Jiang, T. J. Eustis, J. Cai, Fernando Ponce, John Spence, J. Silcox

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

In this letter, an alternative approach to determine the polarity of GaN thin films based on the atomic location by channeling-enhanced microanalysis technique is described. Theoretical calculations provide a straightforward criterion for polarity determination that is a major advantage of this method. At the Bragg position, the thickness-averaged incident electron intensity, and hence, electron induced characteristic x-ray yield, is higher on the N plane than on the Ga if the g vector of the diffraction beam is parallel to the Ga-N bond direction, and vice versa. Experimental results support the theoretical predictions. The possible errors in the experiments are also discussed.

Original languageEnglish (US)
Pages (from-to)389-391
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number3
DOIs
StatePublished - Jan 21 2002

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microanalysis
polarity
electron flux density
thin films
predictions
diffraction
electrons
x rays

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Polarity determination by atomic location by channeling-enhanced microanalysis. / Jiang, N.; Eustis, T. J.; Cai, J.; Ponce, Fernando; Spence, John; Silcox, J.

In: Applied Physics Letters, Vol. 80, No. 3, 21.01.2002, p. 389-391.

Research output: Contribution to journalArticle

Jiang, N. ; Eustis, T. J. ; Cai, J. ; Ponce, Fernando ; Spence, John ; Silcox, J. / Polarity determination by atomic location by channeling-enhanced microanalysis. In: Applied Physics Letters. 2002 ; Vol. 80, No. 3. pp. 389-391.
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