Polarity determination by atomic location by channeling-enhanced microanalysis

N. Jiang, T. J. Eustis, J. Cai, Fernando Ponce, John Spence, J. Silcox

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Abstract

In this letter, an alternative approach to determine the polarity of GaN thin films based on the atomic location by channeling-enhanced microanalysis technique is described. Theoretical calculations provide a straightforward criterion for polarity determination that is a major advantage of this method. At the Bragg position, the thickness-averaged incident electron intensity, and hence, electron induced characteristic x-ray yield, is higher on the N plane than on the Ga if the g vector of the diffraction beam is parallel to the Ga-N bond direction, and vice versa. Experimental results support the theoretical predictions. The possible errors in the experiments are also discussed.

Original languageEnglish (US)
Pages (from-to)389-391
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number3
DOIs
StatePublished - Jan 21 2002

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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