Polarity determination and atomic arrangements at a GaN/SiC interface using high-resolution image matching

J. N. Stirman, Fernando Ponce, A. Pavlovska, I. S T Tsong, David Smith

Research output: Contribution to journalArticle

27 Scopus citations

Abstract

High-resolution electron microscopy and matching simulations were used to investigate structural features of a GaN/SiC heterointerface. The polarity of the (0001)-oriented SiC substrate was confirmed and it was shown that the polarity of the GaN epilayer corresponded to Ga-terminated (0001) growth. From measurement of average (1100) rather than (000l) interplanar spacings it was established that the GaN/SiC interface was abrupt to within one atomic plane. It was concluded that the atomic arrangements at the GaN/SiC interface most likely consisted of N bonded with Si, but with some Ga bonded to C in order to maintain charge balance.

Original languageEnglish (US)
Pages (from-to)822-824
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number7
DOIs
StatePublished - Feb 14 2000

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Polarity determination and atomic arrangements at a GaN/SiC interface using high-resolution image matching'. Together they form a unique fingerprint.

  • Cite this