Abstract

Two integrated polar supply-modulated class E and F power amplifiers (PAs) in 0.18-μm SiGe BiCMOS process are presented. The amplifiers are used to transmit GSM-EDGE signals with an envelope dynamic range of 11 dB and a frequency range of 880-915 MHz. The amplifiers use switch-mode dc-dc buck converters for supply modulation, where sigma-delta (ΣΔM), delta (ΔM), and pulsewidth modulation are used to modulate the PA amplitude signal. A framework has been developed for comparing the three switching techniques for EDGE implementation. The measurement results show that ΔM gives the highest efficiency and lowest adjacent channel power, providing class E and F PA efficiencies of 33% and 31%, respectively, at maximum EDGE output power. The corresponding class E and F linearized amplifiers' output spectra at 400-kHz offset are -54 and -57 dBc, respectively.

Original languageEnglish (US)
Pages (from-to)845-856
Number of pages12
JournalIEEE Transactions on Microwave Theory and Techniques
Volume55
Issue number5
DOIs
StatePublished - May 1 2007

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Keywords

  • EDGE
  • Polar modulation
  • Power amplifiers (PAs)
  • Switching amplifiers

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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