Polar SiGe class E and F amplifiers using switch-mode supply modulation

Jennifer Kitchen; Ilker Deligoz; Sayfe Kiaei; Bertan Bakkaloglu

doi:10.1109/TMTT.2007.895407

Polar SiGe class E and F amplifiers using switch-mode supply modulation

Jennifer Kitchen, Ilker Deligoz, Sayfe Kiaei, Bertan Bakkaloglu

Research output: Contribution to journal › Article

45 Scopus citations

Abstract

Two integrated polar supply-modulated class E and F power amplifiers (PAs) in 0.18-μm SiGe BiCMOS process are presented. The amplifiers are used to transmit GSM-EDGE signals with an envelope dynamic range of 11 dB and a frequency range of 880-915 MHz. The amplifiers use switch-mode dc-dc buck converters for supply modulation, where sigma-delta (ΣΔM), delta (ΔM), and pulsewidth modulation are used to modulate the PA amplitude signal. A framework has been developed for comparing the three switching techniques for EDGE implementation. The measurement results show that ΔM gives the highest efficiency and lowest adjacent channel power, providing class E and F PA efficiencies of 33% and 31%, respectively, at maximum EDGE output power. The corresponding class E and F linearized amplifiers' output spectra at 400-kHz offset are -54 and -57 dBc, respectively.

Original language	English (US)
Pages (from-to)	845-856
Number of pages	12
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	55
Issue number	5
DOIs	https://doi.org/10.1109/TMTT.2007.895407
State	Published - May 1 2007

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Keywords

EDGE
Polar modulation
Power amplifiers (PAs)
Switching amplifiers

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

Kitchen, J., Deligoz, I., Kiaei, S., & Bakkaloglu, B. (2007). Polar SiGe class E and F amplifiers using switch-mode supply modulation. IEEE Transactions on Microwave Theory and Techniques, 55(5), 845-856. https://doi.org/10.1109/TMTT.2007.895407

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title = "Polar SiGe class E and F amplifiers using switch-mode supply modulation",

abstract = "Two integrated polar supply-modulated class E and F power amplifiers (PAs) in 0.18-μm SiGe BiCMOS process are presented. The amplifiers are used to transmit GSM-EDGE signals with an envelope dynamic range of 11 dB and a frequency range of 880-915 MHz. The amplifiers use switch-mode dc-dc buck converters for supply modulation, where sigma-delta (ΣΔM), delta (ΔM), and pulsewidth modulation are used to modulate the PA amplitude signal. A framework has been developed for comparing the three switching techniques for EDGE implementation. The measurement results show that ΔM gives the highest efficiency and lowest adjacent channel power, providing class E and F PA efficiencies of 33% and 31%, respectively, at maximum EDGE output power. The corresponding class E and F linearized amplifiers' output spectra at 400-kHz offset are -54 and -57 dBc, respectively.",

keywords = "EDGE, Polar modulation, Power amplifiers (PAs), Switching amplifiers",

author = "Jennifer Kitchen and Ilker Deligoz and Sayfe Kiaei and Bertan Bakkaloglu",

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T1 - Polar SiGe class E and F amplifiers using switch-mode supply modulation

AU - Kitchen, Jennifer

AU - Deligoz, Ilker

AU - Kiaei, Sayfe

AU - Bakkaloglu, Bertan

PY - 2007/5/1

Y1 - 2007/5/1

N2 - Two integrated polar supply-modulated class E and F power amplifiers (PAs) in 0.18-μm SiGe BiCMOS process are presented. The amplifiers are used to transmit GSM-EDGE signals with an envelope dynamic range of 11 dB and a frequency range of 880-915 MHz. The amplifiers use switch-mode dc-dc buck converters for supply modulation, where sigma-delta (ΣΔM), delta (ΔM), and pulsewidth modulation are used to modulate the PA amplitude signal. A framework has been developed for comparing the three switching techniques for EDGE implementation. The measurement results show that ΔM gives the highest efficiency and lowest adjacent channel power, providing class E and F PA efficiencies of 33% and 31%, respectively, at maximum EDGE output power. The corresponding class E and F linearized amplifiers' output spectra at 400-kHz offset are -54 and -57 dBc, respectively.

AB - Two integrated polar supply-modulated class E and F power amplifiers (PAs) in 0.18-μm SiGe BiCMOS process are presented. The amplifiers are used to transmit GSM-EDGE signals with an envelope dynamic range of 11 dB and a frequency range of 880-915 MHz. The amplifiers use switch-mode dc-dc buck converters for supply modulation, where sigma-delta (ΣΔM), delta (ΔM), and pulsewidth modulation are used to modulate the PA amplitude signal. A framework has been developed for comparing the three switching techniques for EDGE implementation. The measurement results show that ΔM gives the highest efficiency and lowest adjacent channel power, providing class E and F PA efficiencies of 33% and 31%, respectively, at maximum EDGE output power. The corresponding class E and F linearized amplifiers' output spectra at 400-kHz offset are -54 and -57 dBc, respectively.

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KW - Polar modulation

KW - Power amplifiers (PAs)

KW - Switching amplifiers

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Access to Document

10.1109/TMTT.2007.895407