Abstract
Two integrated polar supply-modulated class E and F power amplifiers (PAs) in 0.18-μm SiGe BiCMOS process are presented. The amplifiers are used to transmit GSM-EDGE signals with an envelope dynamic range of 11 dB and a frequency range of 880-915 MHz. The amplifiers use switch-mode dc-dc buck converters for supply modulation, where sigma-delta (ΣΔM), delta (ΔM), and pulsewidth modulation are used to modulate the PA amplitude signal. A framework has been developed for comparing the three switching techniques for EDGE implementation. The measurement results show that ΔM gives the highest efficiency and lowest adjacent channel power, providing class E and F PA efficiencies of 33% and 31%, respectively, at maximum EDGE output power. The corresponding class E and F linearized amplifiers' output spectra at 400-kHz offset are -54 and -57 dBc, respectively.
Original language | English (US) |
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Pages (from-to) | 845-856 |
Number of pages | 12 |
Journal | IEEE Transactions on Microwave Theory and Techniques |
Volume | 55 |
Issue number | 5 |
DOIs | |
State | Published - May 1 2007 |
Keywords
- EDGE
- Polar modulation
- Power amplifiers (PAs)
- Switching amplifiers
ASJC Scopus subject areas
- Radiation
- Condensed Matter Physics
- Electrical and Electronic Engineering