Platelet inversion domains induced by Mg-doping in ELOG AlGaN films

R. Liu, Fernando Ponce, D. Cherns, H. Amano, I. Akasaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have studied the microstructure of heavily Mg-doped Al 0.03Ga 0.97N films grown by metal-organic vapor phase epitaxy in the lateral overgrowth mode (ELOG). A new type of defects with a platelet shape has been observed. According to TEM analysis, these defects are embedded in the overgrowth regions. The platelet is normal to the ELOG stripe direction [1100] AlGaN, forming trapezoidal trenches on the film surface. The thickness of the platelet is about 100nm. We have identified these defects as inversion domains using convergent beam electron diffraction and HR-TEM. Mg segregation at the coalescence boundaries between ELOG islands is believed to result in the formation of the defects.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsH.M. Ng, M. Wraback, K. Hiramatsu, N. Grandjean
Pages765-770
Number of pages6
Volume798
StatePublished - 2003
EventGaN and Related Alloys - 2003 - Boston, MA, United States
Duration: Dec 1 2003Dec 5 2003

Other

OtherGaN and Related Alloys - 2003
CountryUnited States
CityBoston, MA
Period12/1/0312/5/03

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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    Liu, R., Ponce, F., Cherns, D., Amano, H., & Akasaki, I. (2003). Platelet inversion domains induced by Mg-doping in ELOG AlGaN films. In H. M. Ng, M. Wraback, K. Hiramatsu, & N. Grandjean (Eds.), Materials Research Society Symposium - Proceedings (Vol. 798, pp. 765-770)