Platelet inversion domains induced by Mg-doping in ELOG AlGaN films

R. Liu; Fernando Ponce; D. Cherns; H. Amano; I. Akasaki

Platelet inversion domains induced by Mg-doping in ELOG AlGaN films

R. Liu, Fernando Ponce, D. Cherns, H. Amano, I. Akasaki

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have studied the microstructure of heavily Mg-doped Al _0.03Ga _0.97N films grown by metal-organic vapor phase epitaxy in the lateral overgrowth mode (ELOG). A new type of defects with a platelet shape has been observed. According to TEM analysis, these defects are embedded in the overgrowth regions. The platelet is normal to the ELOG stripe direction [1100] _AlGaN, forming trapezoidal trenches on the film surface. The thickness of the platelet is about 100nm. We have identified these defects as inversion domains using convergent beam electron diffraction and HR-TEM. Mg segregation at the coalescence boundaries between ELOG islands is believed to result in the formation of the defects.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Editors	H.M. Ng, M. Wraback, K. Hiramatsu, N. Grandjean
Pages	765-770
Number of pages	6
Volume	798
State	Published - 2003
Event	GaN and Related Alloys - 2003 - Boston, MA, United States Duration: Dec 1 2003 → Dec 5 2003

Other

Other	GaN and Related Alloys - 2003
Country/Territory	United States
City	Boston, MA
Period	12/1/03 → 12/5/03

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

@inproceedings{0e557ac2fa6047f09aae532cfd011138,

title = "Platelet inversion domains induced by Mg-doping in ELOG AlGaN films",

abstract = "We have studied the microstructure of heavily Mg-doped Al 0.03Ga 0.97N films grown by metal-organic vapor phase epitaxy in the lateral overgrowth mode (ELOG). A new type of defects with a platelet shape has been observed. According to TEM analysis, these defects are embedded in the overgrowth regions. The platelet is normal to the ELOG stripe direction [1100] AlGaN, forming trapezoidal trenches on the film surface. The thickness of the platelet is about 100nm. We have identified these defects as inversion domains using convergent beam electron diffraction and HR-TEM. Mg segregation at the coalescence boundaries between ELOG islands is believed to result in the formation of the defects. ",

author = "R. Liu and Fernando Ponce and D. Cherns and H. Amano and I. Akasaki",

year = "2003",

language = "English (US)",

volume = "798",

pages = "765--770",

editor = "H.M. Ng and M. Wraback and K. Hiramatsu and N. Grandjean",

booktitle = "Materials Research Society Symposium - Proceedings",

note = "GaN and Related Alloys - 2003 ; Conference date: 01-12-2003 Through 05-12-2003",

}

TY - GEN

T1 - Platelet inversion domains induced by Mg-doping in ELOG AlGaN films

AU - Liu, R.

AU - Ponce, Fernando

AU - Cherns, D.

AU - Amano, H.

AU - Akasaki, I.

PY - 2003

Y1 - 2003

N2 - We have studied the microstructure of heavily Mg-doped Al 0.03Ga 0.97N films grown by metal-organic vapor phase epitaxy in the lateral overgrowth mode (ELOG). A new type of defects with a platelet shape has been observed. According to TEM analysis, these defects are embedded in the overgrowth regions. The platelet is normal to the ELOG stripe direction [1100] AlGaN, forming trapezoidal trenches on the film surface. The thickness of the platelet is about 100nm. We have identified these defects as inversion domains using convergent beam electron diffraction and HR-TEM. Mg segregation at the coalescence boundaries between ELOG islands is believed to result in the formation of the defects.

AB - We have studied the microstructure of heavily Mg-doped Al 0.03Ga 0.97N films grown by metal-organic vapor phase epitaxy in the lateral overgrowth mode (ELOG). A new type of defects with a platelet shape has been observed. According to TEM analysis, these defects are embedded in the overgrowth regions. The platelet is normal to the ELOG stripe direction [1100] AlGaN, forming trapezoidal trenches on the film surface. The thickness of the platelet is about 100nm. We have identified these defects as inversion domains using convergent beam electron diffraction and HR-TEM. Mg segregation at the coalescence boundaries between ELOG islands is believed to result in the formation of the defects.

UR - http://www.scopus.com/inward/record.url?scp=2942672553&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2942672553&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:2942672553

VL - 798

SP - 765

EP - 770

BT - Materials Research Society Symposium - Proceedings

A2 - Ng, H.M.

A2 - Wraback, M.

A2 - Hiramatsu, K.

A2 - Grandjean, N.

T2 - GaN and Related Alloys - 2003

Y2 - 1 December 2003 through 5 December 2003

ER -

Platelet inversion domains induced by Mg-doping in ELOG AlGaN films

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