Energy relaxation of hot carriers in graphene is studied at low temperatures, where the loss rate may differ significantly from that predicted for electron-phonon interactions. We show here that plasmons, important in the relaxation of energetic carriers in bulk semiconductors, can also provide a pathway for energy relaxation in transport experiments in graphene. We obtain a total loss rate to plasmons that results in energy relaxation times whose dependence on temperature and density closely matches that found experimentally.
|Original language||English (US)|
|Journal||Applied Physics Letters|
|State||Published - Dec 28 2015|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)