Abstract
Energy relaxation of hot carriers in graphene is studied at low temperatures, where the loss rate may differ significantly from that predicted for electron-phonon interactions. We show here that plasmons, important in the relaxation of energetic carriers in bulk semiconductors, can also provide a pathway for energy relaxation in transport experiments in graphene. We obtain a total loss rate to plasmons that results in energy relaxation times whose dependence on temperature and density closely matches that found experimentally.
Original language | English (US) |
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Article number | 262103 |
Journal | Applied Physics Letters |
Volume | 107 |
Issue number | 26 |
DOIs | |
State | Published - Dec 28 2015 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)