Plasma surface interactions and surface properties for remote H-plasma cleaning of Si(100)

T. P. Schneider, J. Cho, Y. L. Chen, D. M. Maher, Robert Nemanich

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Citations (Scopus)

Abstract

Low temperature (50-400 °C) and low pressure (10-300 mTorr) processing conditions for remote H-plasma cleaning of Si(100) substrates were investigated. After plasma exposure, ordered surfaces were obtained which displayed 2×1, 3×1 and 1×1 LEED diffraction patterns. The surface phases following the H-plasma clean were dependent on temperature and pressure. The electronic states of the surfaces were explored with angle resolved uv-photoemission spectroscopy (ARUPS) and states due to Si-H bonding were identified. The atomic interactions at the surface were modeled in terms of several processes including Eley-Rideal abstraction, thermally activated desorption and a physisorbed weakly bound state. The kinetic model was able to describe the transitions observed in the processing results. Suitability of the cleaning process for low temperature epitaxy was demonstrated by low temperature MBE epi-growth on an H-terminated 2×1 surface. The initial oxide formation on the H-terminated surfaces were studied by ARUPS.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsGregg S. Higashi, Eugene A. Irene, Tadahiro Ohmi
Place of PublicationPittsburgh, PA, United States
PublisherPubl by Materials Research Society
Pages197-209
Number of pages13
Volume315
ISBN (Print)1558992138
StatePublished - 1993
Externally publishedYes
EventProceedings of the 1993 Spring Meeting of the Materials Research Society - San Francisco, CA, USA
Duration: Apr 13 1993Apr 15 1993

Other

OtherProceedings of the 1993 Spring Meeting of the Materials Research Society
CitySan Francisco, CA, USA
Period4/13/934/15/93

Fingerprint

Beam plasma interactions
Surface properties
Cleaning
Plasmas
Photoelectron spectroscopy
Temperature
Electronic states
Processing
Epitaxial growth
Molecular beam epitaxy
Oxides
Diffraction patterns
Desorption
Kinetics
Substrates

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Schneider, T. P., Cho, J., Chen, Y. L., Maher, D. M., & Nemanich, R. (1993). Plasma surface interactions and surface properties for remote H-plasma cleaning of Si(100). In G. S. Higashi, E. A. Irene, & T. Ohmi (Eds.), Materials Research Society Symposium Proceedings (Vol. 315, pp. 197-209). Pittsburgh, PA, United States: Publ by Materials Research Society.

Plasma surface interactions and surface properties for remote H-plasma cleaning of Si(100). / Schneider, T. P.; Cho, J.; Chen, Y. L.; Maher, D. M.; Nemanich, Robert.

Materials Research Society Symposium Proceedings. ed. / Gregg S. Higashi; Eugene A. Irene; Tadahiro Ohmi. Vol. 315 Pittsburgh, PA, United States : Publ by Materials Research Society, 1993. p. 197-209.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Schneider, TP, Cho, J, Chen, YL, Maher, DM & Nemanich, R 1993, Plasma surface interactions and surface properties for remote H-plasma cleaning of Si(100). in GS Higashi, EA Irene & T Ohmi (eds), Materials Research Society Symposium Proceedings. vol. 315, Publ by Materials Research Society, Pittsburgh, PA, United States, pp. 197-209, Proceedings of the 1993 Spring Meeting of the Materials Research Society, San Francisco, CA, USA, 4/13/93.
Schneider TP, Cho J, Chen YL, Maher DM, Nemanich R. Plasma surface interactions and surface properties for remote H-plasma cleaning of Si(100). In Higashi GS, Irene EA, Ohmi T, editors, Materials Research Society Symposium Proceedings. Vol. 315. Pittsburgh, PA, United States: Publ by Materials Research Society. 1993. p. 197-209
Schneider, T. P. ; Cho, J. ; Chen, Y. L. ; Maher, D. M. ; Nemanich, Robert. / Plasma surface interactions and surface properties for remote H-plasma cleaning of Si(100). Materials Research Society Symposium Proceedings. editor / Gregg S. Higashi ; Eugene A. Irene ; Tadahiro Ohmi. Vol. 315 Pittsburgh, PA, United States : Publ by Materials Research Society, 1993. pp. 197-209
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