Plasma-initiated rehydrogenation of amorphous silicon to increase the temperature processing window of silicon heterojunction solar cells

Jianwei Shi, Mathieu Boccard, Zachary Holman

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Abstract

The dehydrogenation of intrinsic hydrogenated amorphous silicon (a-Si:H) at temperatures above approximately 300 °C degrades its ability to passivate silicon wafer surfaces. This limits the temperature of post-passivation processing steps during the fabrication of advanced silicon heterojunction or silicon-based tandem solar cells. We demonstrate that a hydrogen plasma can rehydrogenate intrinsic a-Si:H passivation layers that have been dehydrogenated by annealing. The hydrogen plasma treatment fully restores the effective carrier lifetime to several milliseconds in textured crystalline silicon wafers coated with 8-nm-thick intrinsic a-Si:H layers after annealing at temperatures of up to 450 °C. Plasma-initiated rehydrogenation also translates to complete solar cells: A silicon heterojunction solar cell subjected to annealing at 450 °C (following intrinsic a-Si:H deposition) had an open-circuit voltage of less than 600 mV, but an identical cell that received hydrogen plasma treatment reached a voltage of over 710 mV and an efficiency of over 19%.

Original languageEnglish (US)
Article number031601
JournalApplied Physics Letters
Volume109
Issue number3
DOIs
StatePublished - Jul 18 2016

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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