Plasma hydrogenation of strained Si/SiGe/Si heterostructure for layer transfer without ion implantation

Lin Shao, Yuan Lin, J. K. Lee, Q. X. Jia, Yongqiang Wang, M. Nastasi, Phillip E. Thompson, N. David Theodore, Paul K. Chu, Terry Alford, J. W. Mayer, Peng Chen, S. S. Lau

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37 Scopus citations

Abstract

We have developed an innovative approach without the use of ion implantation to transfer a high-quality thin Si layer for the fabrication of silicon-on-insulator wafers. The technique uses a buried strained SiGe layer, a few nanometers in thickness, to provide H trapping centers. In conjunction with H plasma hydrogenation, lift-off of the top Si layer can be realized with cleavage occurring at the depth of the strained SiGe layer. This technique avoids irradiation damage within the top Si layer that typically results from ion implantation used to create H trapping regions in the conventional ion-cut method. We explain the strain-facilitated layer transfer as being due to preferential vacancy aggregation within the strained layer and subsequent trapping of hydrogen, which lead to cracking in a well controlled manner.

Original languageEnglish (US)
Article number091902
JournalApplied Physics Letters
Volume87
Issue number9
DOIs
StatePublished - Aug 29 2005

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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