Plasma hydrogenation of strain-relaxed SiGeSi heterostructure for layer transfer

Peng Chen, Paul K. Chu, T. Höchbauer, M. Nastasi, D. Buca, S. Mantl, N. David Theodore, Terry Alford, J. W. Mayer, R. Loo, M. Caymax, M. Cai, S. S. Lau

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Abstract

The use of plasma hydrogenation for relaxed SiGe layer transfer is demonstrated. It is found that the interface of a strain-relaxed SiGeSi heterostructure is effective in trapping H during plasma hydrogenation. Long microcracks observed at the interface due to the trapping of indiffused H indicate the distinct possibility of transferring the overlayer using the ion-cutting technique. Our results suggest that interfacial defects induced by the He implantation relaxation process trap the indiffusing H atoms and lead to interfacial cracks during hydrogenation or upon postannealing at higher temperatures. It is further noted that trapping of H at the interface is possible only in strain-relaxed structures. Without strain relaxation, H atoms introduced by plasma hydrogenation get trapped just below the sample surface and form a band of shallow platelets. Without the need for high-dose high-energy ion implantation, our results suggest an effective way for high-quality strain-relaxed SiGe layer transfer. The technique has potential for application in the fabrication of SiGe-on-insulator strained Si epitaxial layer and related structures.

Original languageEnglish (US)
Pages (from-to)4944-4946
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number21
DOIs
StatePublished - Nov 2004

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Chen, P., Chu, P. K., Höchbauer, T., Nastasi, M., Buca, D., Mantl, S., Theodore, N. D., Alford, T., Mayer, J. W., Loo, R., Caymax, M., Cai, M., & Lau, S. S. (2004). Plasma hydrogenation of strain-relaxed SiGeSi heterostructure for layer transfer. Applied Physics Letters, 85(21), 4944-4946. https://doi.org/10.1063/1.1824171