Plasma-heating induced intensity-dependent gain in semiconductor lasers

Cun-Zheng Ning; J. V. Moloney

doi:10.1063/1.114012

Plasma-heating induced intensity-dependent gain in semiconductor lasers

Cun-Zheng Ning, J. V. Moloney

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Starting from a set of equations derived from a microscopic theory we show that the familiar nonlinear gain of the form a/(1+I/I_s) introduced in semiconductor laser rate equations phenomenologically should be replaced by a more general form of a/(1+I/I_s)^b. The new scaling exponent b depends on the relaxation constant γ_T that describes the rate of heat dissipation from plasma to the lattice due to carrier-phonon scattering.

Original language	English (US)
Pages (from-to)	559
Number of pages	1
Journal	Applied Physics Letters
DOIs	https://doi.org/10.1063/1.114012
State	Published - 1995

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.114012

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title = "Plasma-heating induced intensity-dependent gain in semiconductor lasers",

abstract = "Starting from a set of equations derived from a microscopic theory we show that the familiar nonlinear gain of the form a/(1+I/Is) introduced in semiconductor laser rate equations phenomenologically should be replaced by a more general form of a/(1+I/Is)b. The new scaling exponent b depends on the relaxation constant γT that describes the rate of heat dissipation from plasma to the lattice due to carrier-phonon scattering.",

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year = "1995",

doi = "10.1063/1.114012",

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AB - Starting from a set of equations derived from a microscopic theory we show that the familiar nonlinear gain of the form a/(1+I/Is) introduced in semiconductor laser rate equations phenomenologically should be replaced by a more general form of a/(1+I/Is)b. The new scaling exponent b depends on the relaxation constant γT that describes the rate of heat dissipation from plasma to the lattice due to carrier-phonon scattering.

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Plasma-heating induced intensity-dependent gain in semiconductor lasers

Abstract

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